Proceedings ArticleDOI
A SiC 8 Bit DAC at 400°C
Ashfaqur Rahman,Sajib Roy,Robert Murphree,Homer Alan Mantooth,A. M. Francis,Jim Holmes +5 more
- pp 241-246
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TLDR
In this article, the first operational digital to analog converter at 400°C was presented, which was designed in the Raytheon 1.2 μm CMOS HiTSiC process.Abstract:
This paper presents the first operational digital to analog converter at 400°C. The 8 bit R-2R ladder DAC was designed in the Raytheon 1.2 μm CMOS HiTSiC process. The data converter is also the first of its kind in SiC. It has been tested with a supply voltage between 12 V and 15 V, and reference voltages of 5 V to 8 V. At 400°C, the maximum measured differential non linearity (DNL) is 2 LSB (least significant bit) and the integral non linearity is 4.4 LSB.read more
Citations
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Journal ArticleDOI
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices
Samuel James Bader,Hyunjea Lee,Reet Chaudhuri,Shimin Huang,Austin Hickman,Alyosha Molnar,Huili Grace Xing,Debdeep Jena,Han Wui Then,Nadim Chowdhury,Tomas Palacios +10 more
TL;DR: In this paper, a review examines potential CMOS monolithic and hybrid approaches in a variety of wide bandgap materials for power and RF electronics applications, which can switch large currents and voltages rapidly with low losses.
Journal ArticleDOI
High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters
Ashfaqur Rahman,Sajib Roy,Robert Murphree,Ramchandra M. Kotecha,Kyle Addington,Affan Abbasi,Homer Alan Mantooth,A. M. Francis,Jim Holmes,Jia Di +9 more
TL;DR: In this article, a high temperature voltage comparator and an operational amplifier (op-amp) in a 1.2-μm silicon carbide (SiC) CMOS process are described.
Journal ArticleDOI
An Integrated SiC CMOS Gate Driver for Power Module Integration
TL;DR: In this article, an integrated silicon carbide (SiC) gate driver using a 1.2-μm complementary metaloxide-semiconductor (CMOS) process is presented.
Journal ArticleDOI
A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500 °C
Ye Tian,Carl-Mikael Zetterling +1 more
TL;DR: In this article, the first fully integrated sigma-delta modulator implemented in an in-house silicon carbide (SiC) bipolar technology for high-temperature applications is presented.
Journal ArticleDOI
A 500 °C 8-b Digital-to-Analog Converter in Silicon Carbide Bipolar Technology
TL;DR: In this paper, an 8-b digital-to-analog converter (DAC) is realized in a current steering R-2R configuration, where high-gain Darlington current switches are used to ensure ideal switching at 500 °C.
References
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Book
CMOS Circuit Design, Layout, and Simulation
TL;DR: Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.
Journal ArticleDOI
High-temperature electronics - a role for wide bandgap semiconductors?
TL;DR: It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range.
Book
MOSFET Models for SPICE Simulation: Including BSIM3v3 and BSIM4
TL;DR: In this paper, the authors present a list of BSIM3 parameters according to function, including the following: 1.1 Numerical Iteration and Convergence, 2.2 DC Equivalent Circuit Model, 3.3 Small-Signal Equivalent Model, 4.4 NQS Effect Small Signal Analysis (NQSSA), 4.5 Non-Quasi-Static Approximation, 5.6 Drain Conductance Model, 6.7 Terminal Charges and Charge Partition, 7.8 Diode Breakdown, and 8.9 Non-
Journal ArticleDOI
Power Conversion With SiC Devices at Extremely High Ambient Temperatures
Tsuyoshi Funaki,Juan Carlos Balda,J. Junghans,Avinash Srikrishnan Kashyap,Homer Alan Mantooth,Fred Barlow,Tsunenobu Kimoto,Takashi Hikihara +7 more
TL;DR: In this article, the capability of SiC power semiconductor devices, in particular JFET and Schottky barrier diodes (SBDs), for application in high-temperature power electronics was evaluated.
Journal ArticleDOI
Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems
TL;DR: The current state of wide bandgap device technology is reviewed and its impact on power electronic system miniaturization for a wide variety of voltage levels is described in this article, followed by an outline of the applications that stand to be impacted.