Journal ArticleDOI
A survey of Gallium Nitride HEMT for RF and high power applications
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TLDR
In this paper, a comprehensive study about an emerging GaN HEMT technology suitable for RF and high power applications is presented. But it was found that AlN/GaN based HEMTs were superior in offering highest drain current of 4 A, high 2DEG charge density (ns) of 6 × 1013 cm−2, highest cutoff frequency of 2.02 THZ, while preserving breakdown voltages.About:
This article is published in Superlattices and Microstructures.The article was published on 2017-09-01. It has received 161 citations till now. The article focuses on the topics: Gallium nitride & High-electron-mobility transistor.read more
Citations
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Interface Characterization of Normally-Off Al2O3/AlN/GaN MOS-Channel-HEMTs with an AlN Interfacial Layer
TL;DR: In this paper, a high performance normally off Al2O3/AlN/GaN MOS-channel high electron mobility transistor (MOSC-HEMT) featuring a monocrystalline AlN interfacial layer inserted between the amorphous Al 2O3 gate dielectric and the GaN channel is presented.
Journal ArticleDOI
A review of GaN HEMT broadband power amplifiers
K. Husna Hamza,D. Nirmal +1 more
TL;DR: In this article, an extensive review of GaN HEMT based power amplifier is presented, where different thermal management solutions used for GaN power amplifier to cope with its self heating phenomenon are explained.
Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.
TL;DR: In this article, a mechanism responsible for reduced current collapse by field plate length was proposed, in which the key role is played during ON-state by the quick field-effect recovery of partial channel depletion caused by electron trapping at AlGaN surface states between gate and drain.
Journal ArticleDOI
Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
TL;DR: In this article, the RF and DC characteristics of AlGaN/GaN High electron mobility transistor are analyzed using discrete field plate technique, which reduces the device parasitic capacitance exhibiting very low CGS and CGD.
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Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
TL;DR: In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor (HEMT) with field plate engineering is investigated and a new drain current model is derived.
References
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Journal ArticleDOI
AlGaN/GaN HEMTs-an overview of device operation and applications
TL;DR: This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems of the AlGaN/GaN high-electron mobility transistor.
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GaN-Based RF Power Devices and Amplifiers
TL;DR: The latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, are reviewed to achieve the state-of-the-art microwave and millimeter-wave performance.
Journal ArticleDOI
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
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Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
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III–nitrides: Growth, characterization, and properties
TL;DR: In this article, the splitting of the valence band by crystal field and spin-orbit interaction has been calculated and measured, and the measured values agree with the calculated values and the effects of strain on the splitting and optical properties have been studied in detail.