A two-dimensional spin field-effect switch.

TLDR: In this paper, a van de Waals heterostructure of atomically thin graphene and semiconducting MoS2 is proposed to switch the spin current in the channel between ON and OFF states by tuning the spin absorption into the semiconductor with a gate electrode.

Abstract: Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS2. Our device combines the superior spin transport properties of graphene with the strong spin–orbit coupling of MoS2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS2 with a gate electrode. Our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials. By forming heterostructures of different layered two-dimensional materials, functional spintronic devices may be built by exploiting the materials’ different spin-orbit coupling and spin transport properties. Here, the authors demonstrate a spin switch in a gated structure of graphene and MoS2.