scispace - formally typeset
Journal ArticleDOI

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

Nilesh K Jaiswal, +1 more
- Vol. 11, pp 46998-47006
Reads0
Chats0
TLDR
In this article , the authors proposed a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT) for power conversion applications, where two parallel gates and a field plate are introduced vertically on the sidewalls and connected, respectively, to the gate and source.
Abstract
This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications. Wherein two parallel gates, and a field plate are introduced vertically on the sidewalls and connected, respectively, to the gate and source. Technology computer-aided design (TCAD) simulator was used in the design process to achieve a specific on-resistance as low as 0.79 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega $ </tex-math></inline-formula>.cm2 for the device, which has the capacity of blocking voltages up to 600 V. The peak electric field of the PSGT-MOSFET could well be lowered to 2.95 MV/cm, which is about 17% lower than that of a conventional trench gate MOSFET (TG-MOSFET) near the trench corner with help of suitable design and optimization of trench depth, drift doping, and field plate thickness. The TCAD simulation shows that the higher drift doping on the device performance of PSGT-MOSFET produces <inline-formula> <tex-math notation="LaTeX">$\sim 2\times $ </tex-math></inline-formula> lower switching losses when compared with a similarly rated conventional TG-MOSFET device.

read more

Content maybe subject to copyright    Report

References
More filters
Journal ArticleDOI

A Survey of Wide Bandgap Power Semiconductor Devices

TL;DR: In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.
Journal ArticleDOI

The 2018 GaN power electronics roadmap

Hiroshi Amano, +64 more
- 26 Mar 2018 - 
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Journal ArticleDOI

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

TL;DR: In this article, the characteristics and commercial status of both vertical and lateral GaN power devices are reviewed, providing the background necessary to understand the significance of these recent developments and the challenges encountered in GaN-based converter design, such as the consequences of faster switching on gate driver and board layout.
Journal ArticleDOI

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

TL;DR: In this paper, a novel approach was proposed to fabricate high-performance enhancement mode (E-mode) AlGaN/GaN HEMTs based on fluoride-based plasma treatment of the gate region.
Journal ArticleDOI

1.8 mΩ·cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

TL;DR: In this paper, a redesigned epitaxial layer structure with a regular hexagonal trench gate layout was proposed to reduce the specific on-resistance to as low as 1.8 mΩcm2 while obtaining a sufficient blocking voltage for 1.2kV-class operation.