Journal ArticleDOI
Analytical model development of channel potential, electric field, threshold voltage and drain current for gate workfunction engineered short channel E-mode N-polar GaN MOS-HEMT
TLDR
In this article, an enhancement mode (E-mode) short channel N-polar GaN MOS-HEMT is proposed to mitigate different short channel effects, work function engineering technique is applied to the gate electrode.Abstract:
In this paper an enhancement mode (E-mode) short channel N-polar GaN MOS-HEMT is proposed. In order to mitigate different short channel effects, workfunction engineering technique is applied to the gate electrode. An analytical model for channel potential, electric field threshold voltage and drain current is developed for the device and validated with Atlas TCAD simulation results. The variation of minimum channel potential and threshold voltage with respect to different channel lengths is also performed. It is observed that device with triple material gate shows better control of short channel effects as compared to single and double material gate based devices.read more
Citations
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Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors
TL;DR: In this article, a physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed-and recessed-gate structure is presented.
Journal ArticleDOI
Dielectric Modulated Enhancement Mode N-Polar GaN MIS-HEMT Biosensor for Label Free Detection
V. Hemaja,Deepak Kumar Panda +1 more
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Rapid Detection of Biomolecules Using Dielectric Modulated Ferroelectric GaN HEMT
V. Hemaja,Deepak Kumar Panda +1 more
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An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics
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GaN and Ga 2 O 3 -based wide bandgap semiconductor devices for emerging nanoelectronics
TL;DR: The quantum transport in AlN/β-Ga2O3 based high electron mobility transistor (HEMT) along with the compact model development of GaN-based metal oxide semiconductor (MOS)-HEMt is presented for high frequency and high power electronics.
References
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Journal ArticleDOI
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
TL;DR: Examples of broadband amplifiers, as well as several of the main areas of high-efficiency amplifier design-notably Class-D, Class-E, class-F, and Class-J approaches, Doherty PAs, envelope-tracking techniques, and Chireix outphasing are described.
Journal ArticleDOI
High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications
Kai Zhang,Yuechan Kong,Zhu Guangrun,Jianjun Zhou,Xinxin Yu,Cen Kong,Zhonghui Li,Tangsheng Chen +7 more
TL;DR: In this paper, a tri-gate GaN/GaN FinFET with a T-shaped gate and extremely linearity of transconductance characteristics was proposed for microwave power applications.
Journal ArticleDOI
Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$ , and 0.66- $\Omega\cdot \hbox{mm}$ $R_{\rm on}$
TL;DR: In this paper, the authors reported enhanced dc and small-signal RF performance of enhancement-mode (E-mode) MOS-HFETs in N-polar GaN technology with an ultrathin 5-nm GaN channel and graded AlGaN back-barrier structure with a record onresistance (Ron) of 0.66 Ω·mm.
Journal ArticleDOI
3-D Analytical Modeling of Dual-Material Triple-Gate Silicon-on-Nothing MOSFET
TL;DR: In this paper, a 3D analytical model of a new structure, namely, dual-material triple-gate silicon-on-nothing MOSFET, was proposed, and the surface potential variation of the structure considering the popular parabolic potential approximation was calculated.
Journal ArticleDOI
High-performance N-polar GaN enhancement-mode device technology
TL;DR: In this paper, the authors report the recent progress in the high-frequency performance of enhancement-mode devices in the novel N-polar GaN technology and provide a pathway for further scaling.
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