Journal ArticleDOI
Electronic switching effect and phase-change transition in chalcogenide materials
Reads0
Chats0
TLDR
The threshold switching mechanism in amorphous chalcogenides has been investigated in this article, showing experimental data that once and for all demonstrate its electronic nature and the physical mechanisms responsible for the switching to the highly conductive state are discussed and the impact of cumulative read-out pulses is also investigated, showing that phase-change transitions induced by usual reading operations in phase change memory cells are completely negligible.Abstract:
The threshold switching mechanism in amorphous chalcogenides is investigated, showing experimental data that once and for all demonstrate its electronic nature. The physical mechanisms responsible for the switching to the highly conductive state are discussed and the impact of cumulative read-out pulses is also investigated, showing that phase-change transitions induced by usual reading operations in phase-change memory cells are completely negligible.read more
Citations
More filters
Journal ArticleDOI
Phase-change random access memory: a scalable technology
Simone Raoux,Geoffrey W. Burr,Matthew J. Breitwisch,Charles T. Rettner,Y.-C. Chen,Robert M. Shelby,Martin Salinga,Daniel Krebs,Shih-Hung Chen,H.L. Lung,Chung H. Lam +10 more
TL;DR: This work discusses the critical aspects that may affect the scaling of PCRAM, including materials properties, power consumption during programming and read operations, thermal cross-talk between memory cells, and failure mechanisms, and discusses experiments that directly address the scaling properties of the phase-change materials themselves.
Journal ArticleDOI
Phase change memory technology
Geoffrey W. Burr,Matthew J. Breitwisch,Michele M. Franceschini,Davide Garetto,Kailash Gopalakrishnan,Bryan L. Jackson,B. N. Kurdi,Chung H. Lam,Luis A. Lastras,Alvaro Padilla,Bipin Rajendran,Simone Raoux,Rohit S. Shenoy +12 more
TL;DR: In this article, the authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in so-called phase change materials.
Journal ArticleDOI
Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices
Daniele Ielmini,Yuegang Zhang +1 more
TL;DR: In this article, a physically based model for conduction in amorphous chalcogenide material is provided, able to predict the currentvoltage (I−V) characteristics as a function of phase state, temperature, and cell geometry.
Journal ArticleDOI
Designing crystallization in phase-change materials for universal memory and neuro-inspired computing
TL;DR: This Review focuses on the crystallization mechanisms of PCMs as well as the design principles to achieve PCMs with high switching speeds and good data retention, which will aid the development of PCM-based universal memory and neuro-inspired devices.
Journal ArticleDOI
Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes
TL;DR: Analysis of over 100 devices finds that the programming voltage and energy are highly scalable and could be below 1 volt and single femtojoules per bit, respectively.
References
More filters
Journal ArticleDOI
Reversible Electrical Switching Phenomena in Disordered Structures
TL;DR: In this paper, a rapid and reversible transition between a highly resistive and a conductive state effected by an electric field was described in various types of disordered materials, particularly amorphous semiconductors covering a wide range of compositions.
Proceedings ArticleDOI
Current status of the phase change memory and its future
TL;DR: The scaling projection shows that there is no physical limit to scaling down to the 22 nm node, with a number of technical challenges being identified.
Journal ArticleDOI
Threshold switching in chalcogenide-glass thin films
TL;DR: In this paper, two general classes of explanations for such non-Ohmic effects are presented: thermal and electronic. But, as discussed in Section 2.1, the use of the terminology electrothermal encompasses predominantly thermal and predominantly electronic processes as well as all intermediate cases, and therefore should not prejudice the casual observer into concluding that both effects are necessarily important.
Journal ArticleDOI
Electronic switching in phase-change memories
TL;DR: In this article, a detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented, and a physical picture of the switching mechanism is proposed.
Proceedings ArticleDOI
OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications
TL;DR: The development status of the memory cell element of OUM (Ovonic Unified Memory) - a chalcogenide-based, phase-change nonvolatile semiconductor memory technology at the 180 nm technology node is discussed.