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Open AccessJournal ArticleDOI

Light-emitting diodes

D. H. Mash
- 01 Jan 1977 - 
- Vol. 265, Iss: 5592, pp 388-388
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Abstract
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

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Citations
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Study of high CRI white light-emitting diode devices with multi-chromatic phosphor

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Semiconductor Nanowires: Epitaxy and Applications

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Nanoparticle meta-grid for enhanced light extraction from light-emitting devices.

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Proceedings ArticleDOI

Experimental characterization regarding two types of phosphor-converted white high-brightness LEDs: Low power and high power devices

TL;DR: In this article, an experimental photometrical analysis regarding two mainstreams inside the high-brightness LED family: the power devices, socalled high power LEDs, and the low power devices is presented.
Proceedings ArticleDOI

Accelerated life test for high-power white LED based on spectroradiometric measurement

TL;DR: In this article, the luminous flux degradation performance of high-power white LEDs was investigated at both the rated current of 350mA and a higher current of 500mA, where the average lifetime of the LEDs is 7057 hours at 350mA, and 3508 hours at 500mA.
References
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Reliability Engineering and System Safety

Sharif Rahman
TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
Journal ArticleDOI

Origin of efficiency droop in GaN-based light-emitting diodes

TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
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Lasing in direct-bandgap GeSn alloy grown on Si

TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
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Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
Journal ArticleDOI

LED Based Indoor Visible Light Communications: State of the Art

TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.