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Light-emitting diodes

D. H. Mash
- 01 Jan 1977 - 
- Vol. 265, Iss: 5592, pp 388-388
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Abstract
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

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Citations
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Reliability Engineering and System Safety

Sharif Rahman
TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
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Origin of efficiency droop in GaN-based light-emitting diodes

TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
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Lasing in direct-bandgap GeSn alloy grown on Si

TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
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Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
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LED Based Indoor Visible Light Communications: State of the Art

TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.
References
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Journal ArticleDOI

The optical properties of Sr 3 SiAl 10 O 20 and Sr 3 SiAl 10 O 20 :Mn 4+

TL;DR: In this article, the authors applied a solgel precursor followed by a ceramic method to synthesize highly crystalline Mn4+-doped Sr3SiAl10O20 (Space group C12/m1) host structure.
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On the internal quantum efficiency for InGaN/GaN light‐emitting diodes grown on insulating substrates

TL;DR: In this article, the structural solutions proposed in this paper can better improve the device performance without increasing the processing difficulty significantly, and their effectiveness in improving the internal quantum efficiency is further supported by the numerical and experimental studies.
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Light Emitting Diodes as an alternative ambient illumination source in photolithography environment

TL;DR: The visual comparison showed that the LED bulb was better to render colors despite a low color rendering index (CRI) and there was no exposure to the photoresist even after 168 hours illumination.
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Green emission from InP-GaP quantum-dot light-emitting diodes

TL;DR: In this paper, the green electroluminescent emission from light-emitting diodes (LEDs) based on the InP-GaP quantum-dot (QD) system is investigated and discussed.
Journal ArticleDOI

Efficiency Improvement of GaN-Based LEDs With a $ \hbox{SiO}_{2}$ Nanorod Array and a Patterned Sapphire Substrate

TL;DR: In this paper, the enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a patterned sapphire substrate (PSS) and a SiO2 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented.