Light-emitting diodes
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.Abstract:
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.read more
Citations
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TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
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Origin of efficiency droop in GaN-based light-emitting diodes
Min-Ho Kim,Martin F. Schubert,Qi Dai,Jong Kyu Kim,E. Fred Schubert,Joachim Piprek,Yongjo Park +6 more
TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
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Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Journal ArticleDOI
Spectroscopic and Device Aspects of Nanocrystal Quantum Dots
Jeffrey M. Pietryga,Young-Shin Park,Young-Shin Park,Jaehoon Lim,Andrew F. Fidler,Wan Ki Bae,Sergio Brovelli,Victor I. Klimov +7 more
TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
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LED Based Indoor Visible Light Communications: State of the Art
TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.
References
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Proceedings ArticleDOI
Determination of maximum strength and optimization of LED chip structure
TL;DR: In this article, the strength of LED is determined for the design requirement in order to ensure good reliability of wire bonding, and the results indicate that increasing pad thickness is the major factor that can reduce stress and enhance LED die strength.
Proceedings ArticleDOI
Light emitting diode in stationary transportation applications: wavelength response to varying temperature
TL;DR: In this article, the authors describe problems of the temperature dependent changes of colorimetrical parameters of LEDs and introduce a method through which to build a correct signal with feedback that, according to the measured temperature, it reacts to correct the optic characteristics of signal.
Journal ArticleDOI
Improved Emission Efficiency in InGaN Light-Emitting Diodes Using Reverse Bias in Pulsed Voltage Operation
TL;DR: In this article, an improved emission efficiency in InGaN near-ultraviolet light-emitting diodes (LEDs) was demonstrated using reverse bias in pulsed voltage operation.
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High-power silicon LEDs with near-band-edge luminescence
TL;DR: In this article, light-emitting diodes (LEDs) were manufactured by cutting a solar cell with a textured surface area of 21 cm2 and exhibited room-temperature near-bandedge luminescence with a maximum external quantum efficiency of ∼ 0.8%.