Light-emitting diodes
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.Abstract:
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.read more
Citations
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Reliability Engineering and System Safety
TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
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Origin of efficiency droop in GaN-based light-emitting diodes
Min-Ho Kim,Martin F. Schubert,Qi Dai,Jong Kyu Kim,E. Fred Schubert,Joachim Piprek,Yongjo Park +6 more
TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
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Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
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Spectroscopic and Device Aspects of Nanocrystal Quantum Dots
Jeffrey M. Pietryga,Young-Shin Park,Young-Shin Park,Jaehoon Lim,Andrew F. Fidler,Wan Ki Bae,Sergio Brovelli,Victor I. Klimov +7 more
TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
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LED Based Indoor Visible Light Communications: State of the Art
TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.
References
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Journal ArticleDOI
Temperature-dependent electroluminescence from InGaN/GaN green light-emitting diodes on silicon with different quantum-well structures
TL;DR: In this article, temperature-dependent electroluminescence from InGaN/GaN light-emitting diodes (LEDs) grown on Si (111) is investigated.
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5Gb/s Eye-Safe LED-Based SI-POF Transmission With Equalization of Transmitter Nonlinearities
TL;DR: In this article, the impact of LED nonlinearities on the system power budget is evaluated, showing that compensation of these nonlinear signal distortions may noticeably increase the overall power budget even for 4-PAM.
Proceedings ArticleDOI
Visible light communication at 20 Mb/s using illumination LEDs
TL;DR: In this article, an optical wireless communication link using illumination light-emitting diodes (LEDs) has been performed and the eye patterns and bit error ratio of LED transmitter are measured and compared according to the modulation frequency and the distance between optical source and receiver.
Journal ArticleDOI
Junction-current-confinement planar light-emitting diodes and optical coupling into large-core diameter fibers using lenses
TL;DR: In this article, high-radiance AlGaAs-GaAs double-heterostructure light-emitting diodes utilizing junction current confinement are described and an effective radiative-recombination constant, B = 1.5(± 0.5) × 10-10cm3/s is deduced from the rise-time data and model.
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The Structure of GaN-Based Transverse Junction Blue LED Array for Uniform Distribution of Injected Current/Carriers
Jin-Wei Shi,Shi-Hao Guol,Ching-Liang Lin,Jinn-Kong Sheu,Kuo-Hua Chang,Wei-Chih Lai,Cheng-Huang Kuo,Chun-Ju Tun,Jen-Inn Chyi +8 more
TL;DR: In this paper, a GaN-based transverse junction blue LED array was demonstrated by the regrowth of n-type GaN layers on the sidewall of p-n and undoped multiple quantum wells (MQWs).