Light-emitting diodes
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.Abstract:
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.read more
Citations
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TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
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Origin of efficiency droop in GaN-based light-emitting diodes
Min-Ho Kim,Martin F. Schubert,Qi Dai,Jong Kyu Kim,E. Fred Schubert,Joachim Piprek,Yongjo Park +6 more
TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
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Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
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Spectroscopic and Device Aspects of Nanocrystal Quantum Dots
Jeffrey M. Pietryga,Young-Shin Park,Young-Shin Park,Jaehoon Lim,Andrew F. Fidler,Wan Ki Bae,Sergio Brovelli,Victor I. Klimov +7 more
TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
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LED Based Indoor Visible Light Communications: State of the Art
TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.
References
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Journal ArticleDOI
Full Optical Contactless Thermometry Based on LED Photoluminescence
Nicola Trivellin,Matteo Buffolo,Carlo De Santi,Matteo Meneghini,Michele Forzan,Fabrizio Dughiero,Enrico Zanoni,Gaudenzio Meneghesso +7 more
TL;DR: A contactless temperature measurement method based on the photoluminescence (PL) of an AlInGaP light-emitting diode (LED) structure under open-circuit conditions and the effect of spectrometer resolution on temperature estimation is evaluated.
Proceedings ArticleDOI
Modeling wide bandgap GaInP photovoltaic cells for conversion efficiencies up to 16.5
TL;DR: In this paper, the authors considered how to accurately model and design wide bandgap (Eg = 2.1 eV) GaInP photovoltaic cells and obtained detailed absorption data for the Ga-rich alloy by extrapolating literature values for InP and Ga 0.5In0.5P.
Journal ArticleDOI
Study of Laser-Debonded GaN LEDs
Chung-Pui Chan,Jie Gao,Tai-Man Yue,Charles Surya,Alan Man Ching Ng,Aleksandra B. Djurišić,P.C.-K. Liu,Ming Li +7 more
TL;DR: In this article, the debonded surface was roughened by photoelectrochemical (PEC) etching in a mixture of potassium hydroxide (KOH) and peroxydisulfate (K2S2O8 ) solution.
Journal ArticleDOI
High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range
W. V. Lundin,Andrey E. Nikolaev,A. V. Sakharov,E. E. Zavarin,S. O. Usov,V. S. Sizov,A. L. Zakgeim,Anton E. Chernyakov,A. F. Tsatsul’nikov +8 more
TL;DR: In this paper, a new method of forming the active region in high efficiency InGaN/GaN /AlGaN light-emitting diode (LED) structure for long-wave green range is described.
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