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Open AccessJournal ArticleDOI

Light-emitting diodes

D. H. Mash
- 01 Jan 1977 - 
- Vol. 265, Iss: 5592, pp 388-388
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Abstract
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

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Citations
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Modelling thermal properties of large LED modules

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A generalized 2D and 3D white LED device simulator integrating photon recycling and luminescent spectral conversion effects

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Performance Enhancement of White LEDs Through Phosphor/Silicone Composite Particles

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Optimization of n‐electrode pattern for p‐side down vertical InGaN/GaN blue light emitting diodes

TL;DR: In this paper, an optimized pattern of n-electrode of p-side down vertical InGaN/GaN blue light emitting diode for uniform distribution of current density and better light extraction efficiency was proposed.
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Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEM

TL;DR: In this article, an investigation of the thickness, the chemical composition and the band-gap properties of AlGaN/GaN quantum wells grown by Metal-Organic Chemical Vapour Deposition (MOCVD) on sapphire (0001) substrates is presented.
References
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Reliability Engineering and System Safety

Sharif Rahman
TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
Journal ArticleDOI

Origin of efficiency droop in GaN-based light-emitting diodes

TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
Journal ArticleDOI

Lasing in direct-bandgap GeSn alloy grown on Si

TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Journal ArticleDOI

Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
Journal ArticleDOI

LED Based Indoor Visible Light Communications: State of the Art

TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.