Light-emitting diodes
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.Abstract:
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.read more
Citations
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High magnetic field effects on shallow and deep impurities in semiconductors
TL;DR: In this article, the ground and excited states of a simple model Hamiltonian for shallow and deep impurities are analyzed for arbitrary magnetic field strengths, and it is shown that high magnetic fields provide an efficient means to distinguish strongly localized impurity states from shallow, effective-mass-like states, irrespective of the binding energies of these states.
Journal ArticleDOI
Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light trapping structures
TL;DR: Simulations of thin film InGaAs/GaAs quantum well solar cells with various back side reflective and planar, symmetric scattering structures used for light trapping have been performed using rigorous coupled-wave analysis, indicating that the absorption spectra of devices with both reflective and scattering structures are largely determined by the Fabry-Perot resonance characteristics of the thin film device structure.
Dissertation
Croissance par HVPE et étude des propriétés optiques de microfils de GaN et de nanofils d'InxGa1-xN en vue de la réalisation de diodes électroluminescentes
TL;DR: In this paper, a manuscrit is consacre a la croissance par HVPE and a spectroscopie optique de nanofils d'InxGa1-xN and of microfils de GaN en vue de la realisation of diodes electroluminescentes.
Dissertation
Exploring and exploiting charge-carrier confinement in semiconductor nanostructures : heterodimensionality in sub-monolayer InAs in GaAs and photoelectrolysis using type-II heterojunctions
TL;DR: In this paper, the authors show that stacked SML InAs in GaAs form a heterodimensional system, in which electrons are 2D and see only the lateral InGaAs QW, whilst the heavier holes are 0D, and are confined in the In-rich agglomerations.
References
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Reliability Engineering and System Safety
TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
Journal ArticleDOI
Origin of efficiency droop in GaN-based light-emitting diodes
Min-Ho Kim,Martin F. Schubert,Qi Dai,Jong Kyu Kim,E. Fred Schubert,Joachim Piprek,Yongjo Park +6 more
TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
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Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
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Spectroscopic and Device Aspects of Nanocrystal Quantum Dots
Jeffrey M. Pietryga,Young-Shin Park,Young-Shin Park,Jaehoon Lim,Andrew F. Fidler,Wan Ki Bae,Sergio Brovelli,Victor I. Klimov +7 more
TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
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LED Based Indoor Visible Light Communications: State of the Art
TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.