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Open AccessJournal ArticleDOI

Light-emitting diodes

D. H. Mash
- 01 Jan 1977 - 
- Vol. 265, Iss: 5592, pp 388-388
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Abstract
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

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Citations
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Mitigating LED Nonlinearity to Enhance Visible Light Communications

TL;DR: It is shown that recombination rates of photon generation can be translated into an equivalent discrete-time circuit that can be inverted, allowing a new pre-distorter with a simpler and more efficient structure than previously studied and overly generic approaches to be developed.
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Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

TL;DR: In this article, the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO2 nanospheres used as the mask.
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Temperature-dependent electroluminescence of AlGaN-based UV LEDs

TL;DR: In this paper, the electrical and optical properties of AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) at elevated temperatures (25/spl deg/C-175/spl dc/C) were investigated, and compared to those of InGaNbased visible LEDs (400-465 nm).
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Matrix-Addressable Micropixellated InGaN Light-Emitting Diodes With Uniform Emission and Increased Light Output

TL;DR: In this article, the authors presented fabrication and performance details of matrix-addressable micro-LED devices which show significant improvements over their earlier counterparts, including a scheme of running n-metal tracks adjacent to each n-GaN mesa, so that resistance variation between the devices is reduced to below 8%.
References
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Reliability Engineering and System Safety

Sharif Rahman
TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
Journal ArticleDOI

Origin of efficiency droop in GaN-based light-emitting diodes

TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
Journal ArticleDOI

Lasing in direct-bandgap GeSn alloy grown on Si

TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Journal ArticleDOI

Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
Journal ArticleDOI

LED Based Indoor Visible Light Communications: State of the Art

TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.