Light-emitting diodes
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.Abstract:
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.read more
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Improved Light Output Power of InGaN/GaN LED by Using Ultrasonic Spray Pyrolysis Deposited MgO
TL;DR: In this paper, an ultrasonic spray pyrolysis deposition method was used to serve as passivation and antireflection layers of the InGaN/GaN light-emitting diodes (LEDs).
Proceedings ArticleDOI
Study on the LED control strategy of constant luminous flux based on photoelectric model
TL;DR: In this paper, a new control strategy of LED, Constant Luminous Flux Control (CLFC), is proposed, whose foundation is the Photoelectric model of LED and taking into account the influence of the temperature, it can effectively eliminate LED luminous flux decay, which is verified by the theoretical derivation, simulation analysis and experimental study.
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High-index-contrast photonic structures: a versatile platform for photon manipulation
TL;DR: In this article , the fabrication of hollow cavities of various sizes (0.2-5 μm in diameter) that are supported by conformal dielectric/metal shells is discussed.
Analysis of the physical processes that limit the reliability of GaN-based optoelectronic devices
TL;DR: In this article, an extensive analysis of the reliability of GaN-based light-emitting Diodes (LEDs) and laser diodes was carried out in close cooperation with the manufacturers of the devices.
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Development of a light-emitting-diode-based bidirectional active remote-sensing system for monitoring crop growth
TL;DR: In this article, a bidirectional active two-band (635 and 825nm) spectral radiometer with two different LEDs was used to monitor canopy growth of paddy rice (Oryza sativa).
References
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Origin of efficiency droop in GaN-based light-emitting diodes
Min-Ho Kim,Martin F. Schubert,Qi Dai,Jong Kyu Kim,E. Fred Schubert,Joachim Piprek,Yongjo Park +6 more
TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
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Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
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Spectroscopic and Device Aspects of Nanocrystal Quantum Dots
Jeffrey M. Pietryga,Young-Shin Park,Young-Shin Park,Jaehoon Lim,Andrew F. Fidler,Wan Ki Bae,Sergio Brovelli,Victor I. Klimov +7 more
TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
Journal ArticleDOI
LED Based Indoor Visible Light Communications: State of the Art
TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.