Light-emitting diodes
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.Abstract:
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.read more
Citations
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Origin of efficiency droop in GaN-based light-emitting diodes
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Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
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Spectroscopic and Device Aspects of Nanocrystal Quantum Dots
Jeffrey M. Pietryga,Young-Shin Park,Young-Shin Park,Jaehoon Lim,Andrew F. Fidler,Wan Ki Bae,Sergio Brovelli,Victor I. Klimov +7 more
TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
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LED Based Indoor Visible Light Communications: State of the Art
TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.
References
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Optical Wireless OFDM System on FPGA: Study of LED Nonlinearity Effects
TL;DR: The obtained experimental results using a hardware demonstrator for OW OFDM transmission based on field programmable gate array (FPGA) and off-the-shelf analog components are presented.
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ZnO:Sb/ZnO:Ga Light Emitting Diode on c-Plane Sapphire by Molecular Beam Epitaxy
Zheng Yang,Sheng Chu,Winnie V. Chen,Lin Li,Jieying Kong,Jingjian Ren,Paul K. L. Yu,Jianlin Liu +7 more
TL;DR: In this paper, a Mesa geometry light emitting diodes (LEDs) were fabricated using standard photolithography and lift-off process, with ohmic contacts achieved using Au/Ni and Au/Ti for top Sb-doped ZnO:Sb and bottom Ga-Doped ZNO:Ga layers, respectively.
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Atom-Probe Tomography of compound semiconductors for photovoltaic and light-emitting device applications
Pyuck-Pa Choi,Oana Cojocaru-Mirédin,Daniel Abou-Ras,Raquel Caballero,Dierk Raabe,Vincent S. Smentkowski,Chan Gyung Park,Gil Ho Gu,Baishakhi Mazumder,Man Hoi Wong,Yan-Ling Hu,Thiago Melo,James S. Speck +12 more
TL;DR: In this article, the authors used compound semiconductors for optoelectronic applications, such as a direct energy band gap (in contrast to silicon) and high-absorption coefficients over a wide spectral range.
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Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED Via V-Pit Formation
Kayo Koike,Seogwoo Lee,Sung Ryong Cho,Jinsub Park,Hyo-Jong Lee,Jun-Seok Ha,Soon-Ku Hong,Hyun-Yong Lee,Meoungwhan Cho,Takafumi Yao +9 more
TL;DR: In this paper, four types of GaN-based light-emitting diodes (LEDs) with V-pits formed in different regions were grown by metal-organic chemical vapor deposition.
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Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates
Natalia Izyumskaya,Fan Zhang,Serdal Okur,T. Selden,V. Avrutin,Ümit Özgür,Sebastian Metzner,C. Karbaum,Frank Bertram,Juergen Christen,Hadis Morkoç +10 more
TL;DR: In this article, the formation of defects in semipolar (11¯01)-oriented GaN layers grown by metal-organic chemical vapor deposition on patterned Si (001) substrates and their effects on optical properties were investigated by steady-state and time-resolved photoluminescence (PL) and spectrally and spatially resolved cathodoluminecence (CL).