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Light-emitting diodes

D. H. Mash
- 01 Jan 1977 - 
- Vol. 265, Iss: 5592, pp 388-388
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Abstract
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

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Citations
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Reliability Engineering and System Safety

Sharif Rahman
TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
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Origin of efficiency droop in GaN-based light-emitting diodes

TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
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Lasing in direct-bandgap GeSn alloy grown on Si

TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
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Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
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LED Based Indoor Visible Light Communications: State of the Art

TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.
References
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Journal ArticleDOI

A method for selecting display primaries to match a target color gamut

TL;DR: It is shown that the color gamut of a laser display designed by this method is similar in shape to the theoretical maximum, or optimal, color gamuts of objects.
Journal ArticleDOI

Degradation of InGaN-Based Laser Diodes Related to Nonradiative Recombination

TL;DR: In this paper, the degradation of InGaN-based laser diodes submitted to electrical stress tests was analyzed by means of optical techniques, which indicated that stress determines an increase in the threshold current of the devices without strong modifications in the slope efficiency.
Journal ArticleDOI

Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

TL;DR: In this article, the enhancement of light extraction from GaN-based light-emitting diodes with a double 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented.
Book ChapterDOI

An Overview of CZTS‐Based Thin‐Film Solar Cells

TL;DR: In this article, a thin-film solar cell with an optical absorber layer composed of the copper-zinc-tin-sulphide-based quaternary semiconductor represented by chemical formula Cu 2 ZnSnS 4 or related compound semiconductors is considered.
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Low turn-on voltage and series resistance of polarization-induced InGaN-GaN LEDs by using p-InGaN/p-GaN superlattice

TL;DR: In this article, the polarization-induced (PI) p-InGaN-GaN superlattice has been used to improve the electrical properties of light-emitting diodes.