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Light-emitting diodes

D. H. Mash
- 01 Jan 1977 - 
- Vol. 265, Iss: 5592, pp 388-388
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Abstract
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

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Publisher Correction: Control of semiconductor emitter frequency by increasing polariton momenta

TL;DR: In the version of this article originally published, there were errors in equations (1), (3b) and (6), as well as in the equation in the sentence beginning “The results presented are normalized to yield”, in addition, equation (5) wasn't numbered as such; the details are shown in the correction notice as discussed by the authors.

Synthesis and Characterization of ZnO Nanostructures

Li Li Yang
TL;DR: One-dimensional ZnO nanostructures have great potential applications in the fields of optoelectronic and sensor devices as mentioned in this paper, therefore, it is very important to realize the controllable growth of one-d...
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Light extraction efficiency enhancement of GaN-based light emitting diodes by a ZnO current spreading layer

TL;DR: In this article, a GaN-based light emitting diodes (LEDs) with a thick and high quality ZnO film as a current spreading layer grown by metal-source vapor phase epitaxy (MVPE) is fabricated successfully.
References
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Reliability Engineering and System Safety

Sharif Rahman
TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
Journal ArticleDOI

Origin of efficiency droop in GaN-based light-emitting diodes

TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
Journal ArticleDOI

Lasing in direct-bandgap GeSn alloy grown on Si

TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Journal ArticleDOI

Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
Journal ArticleDOI

LED Based Indoor Visible Light Communications: State of the Art

TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.