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Light-emitting diodes

D. H. Mash
- 01 Jan 1977 - 
- Vol. 265, Iss: 5592, pp 388-388
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Abstract
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

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Citations
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Reliability Engineering and System Safety

Sharif Rahman
TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
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Origin of efficiency droop in GaN-based light-emitting diodes

TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
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Lasing in direct-bandgap GeSn alloy grown on Si

TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
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Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
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LED Based Indoor Visible Light Communications: State of the Art

TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.
References
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Journal ArticleDOI

Infrared single photon detector based on optical up-converter at 1550 nm.

TL;DR: This work provides a new single photon detection scheme for telecom band that can suppress dark count rate and afterpulsing efficiently without sacrificing the photon detection efficiency (PDE).
Journal ArticleDOI

Enhanced Optical Power of InGaN/GaN Light-Emitting Diode by AlGaN Interlayer and Electron Blocking Layer

TL;DR: In this paper, the effect of an AlGaN interlayer with a low Al composition, which is inserted between multiple quantum wells (MQWs) and an Al-GaN electron blocking layer (EBL) in light-emitting diodes (LEDs), is reported.
Journal ArticleDOI

Optimal Replacement Rate of Devices with Lognormal Failure Distributions

TL;DR: The present approach is especially helpful when such a device is the least reliable component in the system that employ lognormal devices such as a semiconductor laser, LED, avalanche photo diode, or IMPATT diode.
Proceedings ArticleDOI

LED Far Field Pattern Approximation Performance Study

TL;DR: In this paper, the mean square root intensity error, mis correlation factor and half power and peak angles variance have been suggested for performance evaluation, and the polynomial order, range and the noise influence have been analyzed.
Journal ArticleDOI

Integration of a resonant tunneling diode and an optical communications laser

TL;DR: In this paper, the first integration of a resonant tunneling diode and an optical communications laser operating at around 1.5 /spl mu/m was reported, and the authors demonstrate its low-frequency bistable operation and model its electrical characteristics.