Light-emitting diodes
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.Abstract:
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.read more
Citations
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Hierarchical Life Prediction Model for Actively Cooled LED-Based Luminaire
TL;DR: In this paper, a hierarchical model is proposed to assess the lifetime of an actively cooled LED-based luminaire that can provide light output equivalent to a 100 W incandescent lamp.
Journal Article
Temperature-Dependent Light-Output Characteristics of GaInN Light-Emitting Diodes with Different Dislocation Densities.
TL;DR: In this article, the authors investigated the temperature dependence of optical output power of light-emitting diodes (LEDs) with different threading dislocation densities (TDDs) to assess the influence of the TDD on the temperature stability of LEDs.
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GaN-Based Light-Emitting Diodes on Micro-Lens Patterned Sapphire Substrate
TL;DR: In this article, a GaN-based light-emitting diodes (LEDs) were fabricated on a micro-lens patterned sapphire substrate (ML-PSS) by using photolithography with photo resist reflow technique and dry etching process using chlorine based inductively coupled plasma.
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Ga-Doped ZnO Transparent Conductive Oxide Films Applied to GaN-Based Light-Emitting Diodes for Improving Light Extraction Efficiency
TL;DR: In this paper, Ga-doped ZnO (GZO) thin films were deposited on a sapphire substrate utilizing a magnetron sputtering approach, and the GZO films exhibited high transparency and low resistivity when they were annealed at a temperature of 600-800deg C.
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Effect of periodic deflector embedded in InGaN/GaN light emitting diode
Hyung Gu Kim,Min Gyu Na,Hyun Kyu Kim,Hee Yun Kim,Jae Hyoung Ryu,Tran Viet Cuong,Chang-Hee Hong +6 more
TL;DR: In this article, the authors proposed a concept of InGaN∕GaN light emitting diodes with periodic deflector embedded structure (PDE-LED), which was grown on a sapphire substrate with SiO2 hexagonal patterned mask using selective metal-organic chemical deposition.
References
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Reliability Engineering and System Safety
TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
Journal ArticleDOI
Origin of efficiency droop in GaN-based light-emitting diodes
Min-Ho Kim,Martin F. Schubert,Qi Dai,Jong Kyu Kim,E. Fred Schubert,Joachim Piprek,Yongjo Park +6 more
TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
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Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
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Spectroscopic and Device Aspects of Nanocrystal Quantum Dots
Jeffrey M. Pietryga,Young-Shin Park,Young-Shin Park,Jaehoon Lim,Andrew F. Fidler,Wan Ki Bae,Sergio Brovelli,Victor I. Klimov +7 more
TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
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LED Based Indoor Visible Light Communications: State of the Art
TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.