Light-emitting diodes
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.Abstract:
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.read more
Citations
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TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
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Origin of efficiency droop in GaN-based light-emitting diodes
Min-Ho Kim,Martin F. Schubert,Qi Dai,Jong Kyu Kim,E. Fred Schubert,Joachim Piprek,Yongjo Park +6 more
TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
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Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
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Spectroscopic and Device Aspects of Nanocrystal Quantum Dots
Jeffrey M. Pietryga,Young-Shin Park,Young-Shin Park,Jaehoon Lim,Andrew F. Fidler,Wan Ki Bae,Sergio Brovelli,Victor I. Klimov +7 more
TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
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LED Based Indoor Visible Light Communications: State of the Art
TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.
References
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Proceedings ArticleDOI
Achievements and perspectives of GaN based light emitting diodes: A critical review
TL;DR: A critical review of the state of the art LED technologies, their achievements, limitations and proposed solutions to the issues reported till date are provided.
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Superinjection of holes in homojunction diodes based on wide-bandgap semiconductors.
TL;DR: A novel effect which allows homojunction semiconductor devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material, which gives the possibility to significantly overcome the doping problem.
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Optical properties of InGaN/GaN multiple quantum wells with trimethylindium treatment during growth interruption
TL;DR: In this paper, the effects of trimethylindium (TMIn) treatment on the optical properties of InGaN/GaN multiple quantum wells with green emission were investigated.
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Ultralow Interface Recombination Velocity (∼1 cm/s) at CdTe/MgxCd ${}_{1\hbox{-}}$xTe Heterointerface
TL;DR: In this article, the interface recombination velocity at the interfaces in CdTe/Mg x Cd ${}_{1\hbox{-}}$ x Te double heterostructures (DHs) was studied using time-resolved photoluminescence.
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Fabrication and characterization of transparent MEH-PPV/n-GaN (0 0 0 1) heterojunction devices
TL;DR: In this paper, an n-GaN/MEH-PPV thin-film heterojunction diode was fabricated by depositing MEH PPV thin film using spin-coating process.