Light-emitting diodes
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TLDR
Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.Abstract:
Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.read more
Citations
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Properties of Na2SiF6:Mn4+ and Na2GeF6:Mn4+ red phosphors synthesized by wet chemical etching
Yan Kai Xu,Sadao Adachi +1 more
TL;DR: In this paper, the authors reported a simple method of synthesizing red phosphors by wet chemical etching of Si wafers and Ge shots in aqueous HF solution with the addition of an oxidizing agent NaMnO4.
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Droop-Free Colloidal Quantum Dot Light-Emitting Diodes
Jaehoon Lim,Jaehoon Lim,Young-Shin Park,Young-Shin Park,Kaifeng Wu,Hyeong Jin Yun,Victor I. Klimov +6 more
TL;DR: QD-LEDs operating with high internal efficiencies (up to 70%) virtually droop-free up to unprecedented brightness of >100,000 cd m-2 (at ∼500 mA cm-2) are demonstrated.
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Optical power outputs, spectra and dental composite depths of cure, obtained with blue light emitting diode (LED) and halogen light curing units (LCUs)
TL;DR: The prototype LED LCU achieved a greater or equal depth of cure when compared with the commercial LCUs, suggesting LEDs may have a potential in dentistry for light detection as well as emission.
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The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
Di Zhu,Jiuru Xu,Ahmed N. Noemaun,Jong Kyu Kim,E. Fred Schubert,Mary H. Crawford,Daniel D. Koleske +6 more
TL;DR: In this paper, a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) was reported, from 5.5 to 2.4, as Si-doping is applied to an increasing number of quantum barriers (QBs).
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III-Nitride Photonics
TL;DR: The progress in III-Nitride photonics research in 2009 is reviewed in this article, where several new research areas related to terahertz photonics, intersubband quantum wells, nanostructures, and other devices are discussed.
References
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Reliability Engineering and System Safety
TL;DR: In this paper, a polynomial dimensional decomposition (PDD) method for global sensitivity analysis of stochastic systems subject to independent random input following arbitrary probability distributions is presented.
Journal ArticleDOI
Origin of efficiency droop in GaN-based light-emitting diodes
Min-Ho Kim,Martin F. Schubert,Qi Dai,Jong Kyu Kim,E. Fred Schubert,Joachim Piprek,Yongjo Park +6 more
TL;DR: In this paper, the efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes was investigated and it was shown that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MqW region.
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Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
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Spectroscopic and Device Aspects of Nanocrystal Quantum Dots
Jeffrey M. Pietryga,Young-Shin Park,Young-Shin Park,Jaehoon Lim,Andrew F. Fidler,Wan Ki Bae,Sergio Brovelli,Victor I. Klimov +7 more
TL;DR: Recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion are examined.
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LED Based Indoor Visible Light Communications: State of the Art
TL;DR: This paper provides a comprehensive survey on VLC with an emphasis on challenges faced in indoor applications over the period 1979-2014.