Journal ArticleDOI
Low-voltage pentacene organic field-effect transistors with high-κ HfO2 gate dielectrics and high stability under bias stress
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TLDR
In this article, a low-voltage pentacene organic field effect transistors are demonstrated with high-κ hafnium dioxide gate dielectrics grown by atomic layer deposition at 200 °C.Abstract:
Low-voltage pentacene organic field-effect transistors are demonstrated (operating voltage of −3 V) with high-κ hafnium dioxide gate dielectrics grown by atomic layer deposition at 200 °C. A high hole mobility of 0.39 cm2/V s with low threshold voltage (<−0.5 V) and low subthreshold slope of 120 mV/dec is achieved with a HfO2 dielectric layer modified with a phosphonic acid based treatment. A high value of 94.8 nF/V s is obtained for the product of mobility and capacitance density. The devices show excellent bias stress stability with or without the phosphonic acid at the HfO2 gate dielectric surface.read more
Citations
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Integrated materials design of organic semiconductors for field-effect transistors
TL;DR: Some of the major milestones along the way are highlighted to provide a historical view of OFET development, introduce the integrated molecular design concepts and process engineering approaches that lead to the current success, and identify the challenges ahead to make OFETs applicable in real applications.
Journal ArticleDOI
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
TL;DR: Puurunen et al. as discussed by the authors summarized the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD.
Journal ArticleDOI
High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Binghao Wang,Binghao Wang,Wei Huang,Lifeng Chi,Mohammed Al-Hashimi,Tobin J. Marks,Antonio Facchetti +6 more
TL;DR: This review summarizes and analyzes recent advances in materials concepts as well as in thin-film fabrication techniques for high- k gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductor types.
Journal ArticleDOI
Charge carrier mobility in organic molecular materials probed by electromagnetic waves
TL;DR: The present perspective highlights the evaluation methodologies of charge carrier mobility in organic materials, as well as the merits and demerits of techniques examining the feasibility of organic molecules, crystals, and supramolecular assemblies in semiconductor applications.
Journal ArticleDOI
Photonic curing of sol–gel derived HfO2 dielectrics for organic field-effect transistors
TL;DR: In this article, a photonic curing technique is presented for the annealing of sol-gel derived hafnium oxide (HfO 2 ) dielectrics within a few seconds.
References
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Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials
TL;DR: Ninisto et al. as discussed by the authors described the current state of the atomic layer deposition (ALD) technique for producing high-quality thin layers with the focus on oxide materials such as ZrO2 and other rare earth oxides, SnO2, ZnO for high-k dielectrics, gas sensors and various optoelectronic applications.
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Ultrathin HfO 2 films grown on Silicon by atomic layer deposition for advanced gate dielectrics applications
TL;DR: In this paper, growth behavior, structure, thermal stability and electrical properties of ultrathin hafnium oxide films deposited by atomic layer deposition using sequential exposures of HfCl4 and H2O at 300°C on a bare silicon surface or a thin thermally grown SiO2-based interlayer.
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π‐σ‐Phosphonic Acid Organic Monolayer/Sol–Gel Hafnium Oxide Hybrid Dielectrics for Low‐Voltage Organic Transistors
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High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)
Xiao-Hong Zhang,Benoit Domercq,Xudong Wang,Seunghyup Yoo,Takeshi Kondo,Zhong Lin Wang,Bernard Kippelen +6 more
TL;DR: In this article, high performance pentacene field effect transistors have been fabricated using Al2O3 as a gate dielectric material grown by atomic layer deposition (ALD).
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Pentacene organic field-effect transistors with polymeric dielectric interfaces: Performance and stability
TL;DR: In this article, the performance of low-voltage pentacene organic field effect transistors (OFETs) with different gate dielectric interfaces is compared and their performance in terms of electrical properties and operational stability is compared.