Proceedings ArticleDOI
Modeling gate and substrate currents due to conduction- and valence-band electron and hole tunneling [CMOS technology]
Wen-Chin Lee,Chenming Hu +1 more
- pp 198-199
TLDR
In this paper, a model is proposed to quantify the tunneling currents through ultra-thin gate oxides, which can accurately predict the gate and substrate currents and all the subcomponents in dual-gate CMOS devices.Abstract:
A model is proposed to quantify the tunneling currents through ultra-thin gate oxides. With a proper set of effective mass and barrier height, this new model can accurately predict the gate and substrate currents and all the subcomponents in dual-gate CMOS devices. This model can also be employed to extract T/sub ox/ for thin oxide from I-V data with 0.1/spl Aring/ sensitivity, where C-V extraction can be difficult or impossible.read more
Citations
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Multi-voltage CMOS Circuit Design
Volkan Kursun,Eby G. Friedman +1 more
TL;DR: In this paper, the authors present a circuit model of a low-voltage swing buck converter for on-chip integration with a Dual-Supply-Voltage Microprocessor.
Proceedings ArticleDOI
BSIM4 gate leakage model including source-drain partition
TL;DR: In this article, an analytical intrinsic gate leakage model for MOSFET with physical source/drain current partition is developed, which has been implemented in BSIM4 and BSIM3.
Journal ArticleDOI
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Journal ArticleDOI
An adjustable work function technology using Mo gate for CMOS devices
TL;DR: In this paper, Nitrogen implantation of Mo gate was used to fabricate MOS capacitors and CMOS transistors, and a gate work function reduction of 0.42 eV was achieved for the n-FETs on CMOS wafers.
Journal ArticleDOI
Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric
Yee-Chia Yeo,Qiang Lu,Wen-Chin Lee,Wen-Chin Lee,Tsu-Jae King,Chenming Hu,X.W. Wang,Xin Guo,Xin Guo,Tso-Ping Ma +9 more
TL;DR: In this paper, the authors present a study on the characterization and modeling of direct tunneling gate leakage current in both N and P-type MOSFETs with ultrathin silicon nitride (Si/sub 3/N/sub 4/) gate dielectric formed by the jet-vapor deposition (JVD) technique.
References
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Journal ArticleDOI
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
TL;DR: In this article, an accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitanceversus-voltage curves to quantum-mechanically simulated capacitance-versusvoltage results.
Journal ArticleDOI
Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling
J. Maserjian,N. Zamani +1 more
TL;DR: In this paper, the authors show that after tunnel injection of 1017 −5×1018 electrons/cm2, the barrier undergoes significant degradation leading to enhanced tunneling conductance, with reproducible behavior observed among different samples.
Journal ArticleDOI
Polarity dependent gate tunneling currents in dual-gate CMOSFETs
TL;DR: In this paper, the gate tunneling current in dual-gate CMOSFETs is studied over a gate oxide range of 2-6 nm, and it is shown that, when measured in accumulation, the I/sub g/ versus V/ sub g/ characteristics for the p/sup +/pMOSFet are essentially identical to those for the n/sup+/nMOSFLT; however, when measuring in inversion, the p /sup + /pMosFLT exhibits much lower gate current for the same |V/subg
Journal ArticleDOI
Submicron transferred-substrate heterojunction bipolar transistors
TL;DR: In this paper, the authors reported submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors (HBT's) with 17.5 dB unilateral gain at 110 GHz.
Journal ArticleDOI
Molecular-dynamics simulations of polyampholytes: Instabilities due to excess charges and external fields
TL;DR: In this article, the conformational properties of polyampholytes with positively and negatively charged monomers were studied by molecular-dynamics simulations and scaling arguments, and it was shown that the polypholyte is unstable above a critical field strength.
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