Journal ArticleDOI
Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces
TLDR
A solid state electrochemical cell with a simple Ag/MoO3-x/fluorine-doped tin oxide (FTO) sandwich structure shows a normal ECM switching mode after an electroforming process, and the crucial role of moisture adsorption in the switching mode transition has been clarified based on the Pourbaix diagram for the Ag-H2O system for the first time.Abstract:
An important potential application of solid state electrochemical reactions is in redox-based resistive switching memory devices. Based on the fundamental switching mechanisms, the memory has been classified into two modes, electrochemical metallization memory (ECM) and valence change memory (VCM). In this work, we have investigated a solid state electrochemical cell with a simple Ag/MoO3−x/fluorine-doped tin oxide (FTO) sandwich structure, which shows a normal ECM switching mode after an electroforming process. While in the lower voltage sweep range, the switching behavior changes to VCM-like mode with the opposite switching polarity to the ECM mode. By current–voltage measurements under different ambient atmospheres and X-ray photoemission spectroscopy analysis, electrochemical anodic passivation of the Ag electrode and valence change of molybdenum ions during resistance switching have been demonstrated. The crucial role of moisture adsorption in the switching mode transition has been clarified based on the Pourbaix diagram for the Ag–H2O system for the first time. These results provide a fundamental insight into the resistance switching mechanism model in solid state electrochemical cells.read more
Citations
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Journal ArticleDOI
A comprehensive review on emerging artificial neuromorphic devices
TL;DR: A comprehensive review on emerging artificial neuromorphic devices and their applications is offered, showing that anion/cation migration-based memristive devices, phase change, and spintronic synapses have been quite mature and possess excellent stability as a memory device, yet they still suffer from challenges in weight updating linearity and symmetry.
Journal ArticleDOI
All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing
Chuan-Sen Yang,Dashan Shang,Nan Liu,Elliot J. Fuller,Sapan Agrawal,A. Alec Talin,Yong-qing Li,Bao-gen Shen,Young Sun +8 more
TL;DR: An all‐solid‐state electrochemical transistor made with Li ion–based solid dielectric and 2D α‐phase molybdenum oxide (α‐MoO3) nanosheets as the channel is demonstrated, providing an insight into the application of 2D oxides for large‐scale, energy‐efficient neuromorphic computing networks.
Journal ArticleDOI
A Synaptic Transistor based on Quasi-2D Molybdenum Oxide.
TL;DR: N nanoscale three-terminal memristive transistors based on quasi-2D α-phase molybdenum oxide (α-MoO3 ) to emulate biological synapses are presented, providing insight into the potential application of 2D transition-metal oxides for synaptic devices with high scaling ability, low energy consumption, and high processing efficiency.
Journal ArticleDOI
Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
Guangdong Zhou,Bai Sun,Bai Sun,Yanqing Yao,Huihui Zhang,Ankun Zhou,Ankun Zhou,Kamal Alameh,Baofu Ding,Baofu Ding,Qunliang Song,Qunliang Song +11 more
TL;DR: In this article, an electronic resistive switching memory (ERSM) device using a single MoSe2-doped ultralong Se microwire is attained. And the ERSM exhibits stable resistance ratio of ∼102 for 5000's, highly stable performance during 500 stressing cycles, and excellent immunity to the frequency of the driving voltage.
Journal ArticleDOI
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
Hong-Yu Chen,Stefano Brivio,Che Chia Chang,Jacopo Frascaroli,Tuo-Hung Hou,Boris Hudec,Ming Liu,Hangbing Lv,Gabriel Molas,Joon Sohn,Sabina Spiga,Mani Teja Vijjapu,Elisa Vianello,H.-S. Philip Wong +13 more
TL;DR: In this article, the development of resistive switching (RS) device technology including the fundamental physics, material engineering, three-dimensional integration, and bottom-up fabrication is reviewed, and options for 3D memory array architectures are presented for the mass storage application.
References
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Journal ArticleDOI
Nanoionics-based resistive switching memories
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
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The Grotthuss mechanism
TL;DR: In this paper, it is suggested that the molecular mechanism behind prototropic mobility involves a periodic series of isomerizations between H 9 O 4 + and H 5 O 2 +, the first trigerred by hyrdogen-bond cleavage of a second-shell water molecule and the second by the reverse, hydrogen-bonder formation process.
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Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon,Kyung-min Kim,Jae Hyuck Jang,Jong Myeong Jeon,Min Hwan Lee,Gun Hwan Kim,Xiang-Shu Li,Gyeong-Su Park,Bora Lee,Seungwu Han,Miyoung Kim,Cheol Seong Hwang +11 more
TL;DR: In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.
Journal ArticleDOI
Nanoionics: ion transport and electrochemical storage in confined systems.
TL;DR: The crystallizing field of 'nanoionics' bears the conceptual and technological potential that justifies comparison with the well-acknowledged area of nanoelectronics, and implies both emphasizing the indispensability of electrochemical devices that rely on ion transport and complement the world of electronics.