Journal ArticleDOI
Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories
TLDR
In this paper, a time-resolved analysis of threshold voltage and resistance in phase-change memory (PCM) is presented, where the authors show that the threshold voltage for electronic switching of the amorphous chalcogenide determines the boundary between programming and readout operation.Abstract:
The electronic behavior of the chalcogenide material used in phase-change memory (PCM) plays a key role in defining the operation voltages and times of the memory cell. In particular, the threshold voltage for electronic switching of the amorphous chalcogenide determines the boundary between programming and readout operation, while its resistance allows the recognition of the bit status. This paper present a time-resolved analysis of threshold voltage and resistance in a PCM. Both dynamics of threshold voltage and resistance display a fast transient, named recovery behavior, in the first 30 ns after programming. A slower, nonsaturating drift transient is found for longer times. The two transients are discussed referring to electronic and structural rearrangements in the amorphous chalcogenide. Finally, the impact on the device level is consideredread more
Citations
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Journal ArticleDOI
In-memory computing with resistive switching devices
TL;DR: This Review Article examines the development of in-memory computing using resistive switching devices, where the two-terminal structure of the devices, theirresistive switching properties, and direct data processing in the memory can enable area- and energy-efficient computation.
Journal ArticleDOI
Phase-change random access memory: a scalable technology
Simone Raoux,Geoffrey W. Burr,Matthew J. Breitwisch,Charles T. Rettner,Y.-C. Chen,Robert M. Shelby,Martin Salinga,Daniel Krebs,Shih-Hung Chen,H.L. Lung,Chung H. Lam +10 more
TL;DR: This work discusses the critical aspects that may affect the scaling of PCRAM, including materials properties, power consumption during programming and read operations, thermal cross-talk between memory cells, and failure mechanisms, and discusses experiments that directly address the scaling properties of the phase-change materials themselves.
Journal ArticleDOI
Phase change memory technology
Geoffrey W. Burr,Matthew J. Breitwisch,Michele M. Franceschini,Davide Garetto,Kailash Gopalakrishnan,Bryan L. Jackson,B. N. Kurdi,Chung H. Lam,Luis A. Lastras,Alvaro Padilla,Bipin Rajendran,Simone Raoux,Rohit S. Shenoy +12 more
TL;DR: In this article, the authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in so-called phase change materials.
Journal ArticleDOI
Phase Change Materials and Their Application to Nonvolatile Memories
TL;DR: Phase change materials are materials that exist in at least two structurally distinct solid phases, an amorphous and one (or more) crystalline phases that can be used to store information in technological applications if it is possible to switch the material repeatedly between the two phases and if both phases are stable at operating temperature.
Journal ArticleDOI
Equivalent-accuracy accelerated neural-network training using analogue memory
Stefano Ambrogio,Pritish Narayanan,Hsinyu Tsai,Robert M. Shelby,Irem Boybat,Irem Boybat,Carmelo di Nolfo,Carmelo di Nolfo,Severin Sidler,Severin Sidler,Massimo Giordano,Martina Bodini,Martina Bodini,Nathan C. P. Farinha,Benjamin Killeen,Christina Cheng,Yassine Jaoudi,Geoffrey W. Burr +17 more
TL;DR: Mixed hardware–software neural-network implementations that involve up to 204,900 synapses and that combine long-term storage in phase-change memory, near-linear updates of volatile capacitors and weight-data transfer with ‘polarity inversion’ to cancel out inherent device-to-device variations are demonstrated.
References
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Proceedings ArticleDOI
Current status of the phase change memory and its future
TL;DR: The scaling projection shows that there is no physical limit to scaling down to the 22 nm node, with a number of technical challenges being identified.
Journal ArticleDOI
Threshold switching in chalcogenide-glass thin films
TL;DR: In this paper, two general classes of explanations for such non-Ohmic effects are presented: thermal and electronic. But, as discussed in Section 2.1, the use of the terminology electrothermal encompasses predominantly thermal and predominantly electronic processes as well as all intermediate cases, and therefore should not prejudice the casual observer into concluding that both effects are necessarily important.
Journal ArticleDOI
Electronic switching in phase-change memories
TL;DR: In this article, a detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented, and a physical picture of the switching mechanism is proposed.
Proceedings ArticleDOI
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
Fabio Pellizzer,Agostino Pirovano,F. Ottogalli,M. Magistretti,M. Scaravaggi,Paola Zuliani,Marina Tosi,A. Benvenuti,P. Besana,S. Cadeo,T. Marangon,R. Morandi,R. Piva,A. Spandre,R. Zonca,Alberto Modelli,Enrico Varesi,Tyler Lowrey,A. Lacaita,Giulio Casagrande,Paolo Cappelletti,Roberto Bez +21 more
TL;DR: In this paper, a novel cell structure for chalcogenide-based nonvolatile phase-change memories is presented, which is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance.
Journal ArticleDOI
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
TL;DR: In this paper, a detailed investigation of the time evolution for the low-field resistance R/sub off/ and the threshold voltage V/sub th/ in chalcogenide-based phase-change memory devices is presented.
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