Journal ArticleDOI
Room-temperature ultraviolet nanowire nanolasers
Michael H. Huang,Samuel S. Mao,Henning Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang,Peidong Yang +9 more
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TLDR
Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.Abstract:
Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 03 nanometer The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysisread more
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ZnO nanowire growth and devices
Young-Woo Heo,David P. Norton,Li-Chia Tien,Y. W. Kwon,B. S. Kang,Fan Ren,Stephen J. Pearton,Jeffrey R. LaRoche +7 more
TL;DR: In this paper, a detailed review of fabrication methods for obtaining device functionality from single ZnO nanorods is presented, where a key aspect is the use of sonication to facilitate transfer of the nanorod from the initial substrate on which they are grown to another substrate for device fabrication.
Journal ArticleDOI
Synthesis and formation mechanism of manganese dioxide nanowires/nanorods.
TL;DR: It is interesting to find that all the MnO( 2) one-dimensional nanostructures have a similar formation process: delta-MnO(2), which has a layer structure, serves as an important intermediate to other forms of MnO (2), and is believed to be responsible for the initial formation of Mn olympic nanostructure.
Patent
Methods and devices for fabricating and assembling printable semiconductor elements
Ralph G. Nuzzo,John A. Rogers,Etienne Menard,Keon Jae Lee,Dahl-Young Khang,Yugang Sun,Matthew Meitl,Zhengtao Zhu +7 more
TL;DR: In this article, the authors present methods and devices for fabricating printable semiconductor elements and assembling them onto substrate surfaces, which are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on polymeric materials.
Journal ArticleDOI
ZnO: growth, doping & processing
David P. Norton,Young-Woo Heo,M. Ivill,Kelly P. Ip,Stephen J. Pearton,Matthew F. Chisholm,T. Steiner +6 more
TL;DR: A review of recent results in developing improved control of growth, doping, and fabrication processes for ZnO devices with possible applications to ultraviolet (UV) light emitters, spin functional devices, gas sensors, transparent electronics, and surface acoustic wave devices is given in this article.
Journal ArticleDOI
One-dimensional conducting polymer nanocomposites: Synthesis, properties and applications
TL;DR: In this paper, an overview of the synthesis of one-dimensional (1D) conducting polymer nanocomposites and their properties and applications is presented, where the authors highlight the advantages of 1D conducting polymer polymers over the parent conducting polymers.
References
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Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
TL;DR: The assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping are reported, and electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.
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Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport
TL;DR: In this paper, the capacitance matrix was calculated for different chain lengths using the software package FastCap MIT (1992) and a ligand shell dielectric constant of 3.14 aF.
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Optical gain and stimulated emission in nanocrystal quantum dots.
Victor I. Klimov,Alexander Mikhailovsky,S. Xu,Anton V. Malko,Jennifer A. Hollingsworth,C. A. Leatherdale,H.-J. Eisler,Moungi G. Bawendi +7 more
TL;DR: In this article, the authors examined the competing dynamical processes involved in optical amplification and lasing in nanocrystal quantum dots and found that, despite a highly efficient intrinsic nonradiative Auger recombination, large optical gain can be developed at the wavelength of the emitting transition for close-packed solids of these dots.
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Optical gain in silicon nanocrystals
TL;DR: It is demonstrated that light amplification is possible using silicon itself, in the form of quantum dots dispersed in a silicon dioxide matrix, which opens a route to the fabrication of a silicon laser.
Journal ArticleDOI
Optically pumped lasing of ZnO at room temperature
TL;DR: In this paper, the authors reported the observation of optically pumped lasing in ZnO at room temperature using a plasma-enhanced molecular beam epitaxy on sapphire substrates.