Journal ArticleDOI
Silicon sensor development for the ATLAS upgrade for SLHC
TLDR
In this article, the authors report on new sensors with various n-strip isolation structures that have been designed and are being fabricated in the search for the best approach, including a 3D sensor for the Pixel layers and an n-in-p sensor with highvoltage operation capability for the SCT.Abstract:
The accelerator upgrade of the large hadron collider (LHC) to super-LHC is foreseen around the year 2015. The upgrade is to increase the luminosity to 10 35 cm −2 s −1 and to accumulate 3000 fb −1 . To cope with the increased occupancy and fluence, the transition radiation tracker (TRT) will be replaced with silicon microstrip sensors, and the semiconductor tracker (SCT) with short-strip silicon microstrip sensors. Both the ATLAS Pixel and SCT communities need to develop new sensors to work to fluences of 1×10 16 1-MeV-neq/cm 2 and to 8×10 14 , respectively. Technologies being investigated include a “3D sensor” for the Pixel layers, and an “n-in-p sensor” with high-voltage operation capability for the SCT. The “n-in-p sensor” requires n-strip isolation with high onset voltage of microdischarge. We report here on new sensors with various n-strip isolation structures that have been designed and are being fabricated in the search for the best approach.read more
Citations
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Journal ArticleDOI
Simulations of radiation-damaged 3D detectors for the Super-LHC
David Pennicard,Giulio Pellegrini,Celeste Fleta,Richard Bates,Val O'Shea,C. Parkes,Nicola Tartoni +6 more
TL;DR: In this paper, the performances of various 3D detector structures are simulated with up to 1 × 10 16 ǫ-1 MeV-n eq / cm 2 radiation damage.
Journal ArticleDOI
p-Bulk silicon microstrip sensors and irradiation
Yoshinobu Unno,Susumu Terada,T. Kohriki,Yoichi Ikegami,Kazuhiko Hara,K. Inoue,A. Mochizuki,Kazuhisa Yamamura,Ken-ichi Sato +8 more
TL;DR: In this paper, the leakage current, onset of microdischarge, body capacitance, charge collection efficiency, and n-strip isolation at the fluences of nil, 0.7 10 14, and 7 10 14 1-MeV neutrons equivalent (neq)/cm 2.
Journal ArticleDOI
Evaluation of novel KEK/HPK n-in-p pixel sensors for ATLAS upgrade with testbeam
Ryo Nagai,J. Idarraga,C. Gallrapp,Yoshinobu Unno,Abdenour Lounis,Osamu Jinnouchi,Yosuke Takubo,Kazunori Hanagaki,Kazuhiko Hara,Yoichi Ikegami,N. Kimura,K. Nagai,Itsuo Nakano,Ryuichi Takashima,Susumu Terada,Junji Tojo,Kohei Yorita,S. Altenheiner,Malte Backhaus,Marco Bomben,D. Forshaw,M. George,Jens Janssen,Jennifer Jentzsch,Tobias Lapsien,A. La Rosa,Anna Macchiolo,G. Marchiori,Clara Nellist,I. Rubinsky,Andre Rummler,G. Troska,P. Weigell,Jens Weingarten +33 more
TL;DR: In this paper, a new type of n-in-p planar pixel sensors have been developed at KEK/HPK in order to cope with the maximum particle fluence of 1 −3×1016 1 −MeV equivalent neutrons per square centimeter (n eq / cm 2 ) in the upcoming LHC upgrades.
Journal ArticleDOI
Development of Radiation Hard ${\rm N}^{+}$ -on-P Silicon Microstrip Sensors for Super LHC
K. Hara,K. Inoue,A. Mochizuki,T. Meguro,H. Hatano,Yoichi Ikegami,T. Kohriki,Susumu Terada,Yoshinobu Unno,Kazuhisa Yamamura,S. Kamata +10 more
TL;DR: In this article, a non-inverting n+-on-p sensor was used at the Super LHC experiment to measure the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.
Journal ArticleDOI
Design, Simulation, Production and Initial Characterisation of 3D Silicon Detectors
TL;DR: In this article, a double-sided 3D detector with n-and p-type electrode columns passing through a silicon substrate has been presented, which greatly reduces the detector's depletion voltage and collection time and improves its radiation hardness.
References
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TL;DR: The CERN RD50 collaboration as mentioned in this paper is working on the development of semiconductor sensors matching the requirements of the SLHC experiments, which includes 3D, Semi-3D and thin detectors.
Journal ArticleDOI
Proton irradiation on p-bulk silicon strip detectors using 12 GeV PS at KEK
Susumu Terada,H. Iwasaki,T. Kohriki,T. Kondo,Masaharu Numajiri,Y. Unno,T. Handa,Y. Iwata,T. Ohsugi,N. Tamura,Ryuichi Takashima +10 more
TL;DR: In this article, p-bulk n-strip silicon strip detectors were irradiated with a 12 GeV proton beam at the KEK Proton Synchrotron in order to investigate a radiation damage due to high fluence of high energy protons.