Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination

TLDR: In this article, the surface potential changes are caused by electrons which tunnel from the gate under high bias stress and get trapped at the surface states near the gate, which correlates with a large improvement in microwave power performance in these devices after passivation.

Abstract: Very slow drain current and surface potential transients have been observed in AlGaN/GaN heterostructure field effect transistors that are subjected to high bias stress. Simultaneous measurements of drain current and surface potential indicate that large change in surface potential after stress is responsible for the reduction in drain current in these devices. Measurements of surface potential profile from the gate edge toward the drain as a function of time indicate that surface potential changes occur mostly near the gate. It is proposed that the surface potential changes are caused by electrons which tunnel from the gate under high bias stress and get trapped at the surface states near the gate. Passivation of the surface with SiN/sub x/ reduces the transient magnitudes to a large extent. This correlates with a large improvement in microwave power performance in these devices after passivation. UV illumination of these devices totally eliminates the drain current and surface potential transients.