Switching Mechanism and the Scalability of Vertical-TFETs
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TLDR
In this article, vertical tunnel field effect transistors (v-TFETs) based on vertically stacked hereto-junctions from 2-D transition metal dichalcogenide materials are studied by atomistic quantum transport simulations.Abstract:
In this brief, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2-D transition metal dichalcogenide materials are studied by atomistic quantum transport simulations. The switching mechanism of a v-TFET is found to be different from previous predictions. As a consequence of this switching mechanism, the extension region where the materials are not stacked over is found to be critical for turning off the v-TFET. This extension region makes the scaling of v-TFETs challenging. In addition, due to the presence of both positive and negative charges inside the channel, v-TFETs also exhibit negative top gate capacitance. As a result, v-TFETs have good energy-delay products and are one of the promising candidates for low-power applications.read more
Citations
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Recent Advances in Low-Dimensional Heterojunction-Based Tunnel Field Effect Transistors
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Design and Analysis of Dual Source Vertical Tunnel Field Effect Transistor for High Performance
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Design and Analysis of a Heterojunction Vertical t-Shaped Tunnel Field Effect Transistor
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TL;DR: In this article, a heterojunction vertical t-shaped tunnel field effect transistor (V-tTFET) is proposed, and the scaling issue associated with it is investigated using Sentaurus Technology computer-aided design simulation.
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