Showing papers on "Amorphous silicon published in 2012"

High-efficiency Silicon Heterojunction Solar Cells: A Review

Abstract: Silicon heterojunction solar cells consist of thin amorphous silicon layers deposited on crystalline silicon wafers. This design enables energy conversion efficiencies above 20% at the industrial production level. The key feature of this technology is that the metal contacts, which are highly recombination active in traditional, diffused-junction cells, are electronically separated from the absorber by insertion of a wider bandgap layer. This enables the record open-circuit voltages typically associated with heterojunction devices without the need for expensive patterning techniques. This article reviews the salient points of this technology. First, we briefly elucidate device characteristics. This is followed by a discussion of each processing step, device operation, and device stability and industrial upscaling, including the fabrication of solar cells with energy-conversion efficiencies over 21%. Finally, future trends are pointed out. (orig.)

Current Losses at the Front of Silicon Heterojunction Solar Cells

Abstract: The current losses due to parasitic absorption in the indium tin oxide (ITO) and amorphous silicon (a-Si:H) layers at the front of silicon heterojunction solar cells are isolated and quantified. Quantum efficiency spectra of cells in which select layers are omitted reveal that the collection efficiency of carriers generated in the ITO and doped a-Si:H layers is zero, and only 30% of light absorbed in the intrinsic a-Si:H layer contributes to the short-circuit current. Using the optical constants of each layer acquired from ellipsometry as inputs in a model, the quantum efficiency and short-wavelength current loss of a heterojunction cell with arbitrary a-Si:H layer thicknesses and arbitrary ITO doping can be correctly predicted. A 4 cm2 solar cell in which these parameters have been optimized exhibits a short-circuit current density of 38.1 mA/cm2 and an efficiency of 20.8%.

Light trapping in solar cells: can periodic beat random?

Abstract: Theory predicts that periodic photonic nanostructures should outperform their random counterparts in trapping light in solar cells. However, the current certified world-record conversion efficiency for amorphous silicon thin-film solar cells, which strongly rely on light trapping, was achieved on the random pyramidal morphology of transparent zinc oxide electrodes. Based on insights from waveguide theory, we develop tailored periodic arrays of nanocavities on glass fabricated by nanosphere lithography, which enable a cell with a remarkable short-circuit current density of 17.1 mA/cm(2) and a high initial efficiency of 10.9%. A direct comparison with a cell deposited on the random pyramidal morphology of state-of-the-art zinc oxide electrodes, replicated onto glass using nanoimprint lithography, demonstrates unambiguously that periodic structures rival random textures.

Plasmonic Light Trapping in Thin-film Silicon Solar Cells with Improved Self-Assembled Silver Nanoparticles

Abstract: Plasmonic metal nanoparticles are of great interest for light trapping in thin-film silicon solar cells. In this Letter, we demonstrate experimentally that a back reflector with plasmonic Ag nanoparticles can provide light-trapping performance comparable to state-of-the-art random textures in n-i-p amorphous silicon solar cells. This conclusion is based on the comparison to high performance n-i-p solar cell and state-of-the-art efficiency p-i-n solar cells deposited on the Asahi VU-type glass. With the plasmonic back reflector a gain of 2 mA/cm2 in short-circuit current density was obtained without any deterioration of open circuit voltage or fill factor compared to the solar cell on a flat back reflector. The excellent light trapping is a result of strong light scattering and low parasitic absorption of self-assembled Ag nanoparticles embedded in the back reflector. The plasmonic back reflector provides a high degree of light trapping with a haze in reflection greater than 80% throughout the wavelength r...

Plasmonic light trapping in thin-film Si solar cells

Abstract: Plasmonic nanostructures have been recently investigated as a possible way to improve absorption of light in solar cells. The strong interaction of small metal nanostructures with light allows control over the propagation of light at the nanoscale and thus the design of ultrathin solar cells in which light is trapped in the active layer and efficiently absorbed. In this paper we review some of our recent work in the field of plasmonics for improved solar cells. We have investigated two possible ways of integrating metal nanoparticles in a solar cell. First, a layer of Ag nanoparticles that improves the standard antireflection coating used for crystalline and amorphous silicon solar cells has been designed and fabricated. Second, regular and random arrays of metal nanostructures have been designed to couple light in waveguide modes of thin semiconductor layers. Using a large-scale, relative inexpensive nano-imprint technique, we have designed a back-contact light trapping surface for a-Si:H solar cells which show enhanced efficiency over standard randomly textured cells.

Metamaterial-Plasmonic Absorber Structure for High Efficiency Amorphous Silicon Solar Cells

Abstract: We show that a planar structure, consisting of an ultrathin semiconducting layer topped with a solid nanoscopically perforated metallic film and then a dielectric interference film, can highly absorb (superabsorb) electromagnetic radiation in the entire visible range, and thus can become a platform for high-efficiency solar cells. The perforated metallic film and the ultrathin absorber in this broadband superabsorber form a metamaterial effective film, which negatively refracts light in this broad frequency range. Our quantitative simulations confirm that the superabsorption bandwidth is maximized at the checkerboard pattern of the perforations. These simulations show also that the energy conversion efficiency of a single-junction amorphous silicon solar cell based on our optimized structure can exceed 12%.

Improving the light-harvesting of amorphous silicon solar cells with photochemical upconversion

Abstract: Single-threshold solar cells are fundamentally limited by their ability to harvest only those photons above a certain energy. Harvesting below-threshold photons and re-radiating this energy at a shorter wavelength would thus boost the efficiency of such devices. We report an increase in light harvesting efficiency of a hydrogenated amorphous silicon (a-Si:H) thin-film solar cell due to a rear upconvertor based on sensitized triplet–triplet-annihilation in organic molecules. Low energy light in the range 600–750 nm is converted to 550–600 nm light due to the incoherent photochemical process. A peak efficiency enhancement of (1.0 ± 0.2)% at 720 nm is measured under irradiation equivalent to (48 ± 3) suns (AM1.5). We discuss the pathways to be explored in adapting photochemical UC for application in various single threshold devices.

Apparatus and method for forming semiconductor contacts

Abstract: A method for forming semiconductor contacts comprises forming a germanium fin structure over a silicon substrate, depositing a doped amorphous silicon layer over the first drain/source region and the second drain/source region at a first temperature, wherein the first temperature is lower than a melting point of the germanium fin structure and performing a solid phase epitaxial regrowth process on the amorphous silicon layer at a second temperature, wherein the second temperature is lower than the melting point of the germanium fin structure.

Broadband enhancement in thin-film amorphous silicon solar cells enabled by nucleated silver nanoparticles.

Abstract: Recently plasmonic effects have gained tremendous interest in solar cell research because they are deemed to be able to dramatically boost the efficiency of thin-film solar cells. However, despite of the intensive efforts, the desired broadband enhancement, which is critical for real device performance improvement, has yet been achieved with simple fabrication and integration methods appreciated by the solar industry. We propose in this paper a novel idea of using nucleated silver nanoparticles to effectively scatter light in a broadband wavelength range to realize pronounced absorption enhancement in the silicon absorbing layer. Since it does not require critical patterning, experimentally these tailored nanoparticles were achieved by the simple, low-cost and upscalable wet chemical synthesis method and integrated before the back contact layer of the amorphous silicon thin-film solar cells. The solar cells incorporated with 200 nm nucleated silver nanoparticles at 10% coverage density clearly demonstrate a broadband absorption enhancement and significant superior performance including a 14.3% enhancement in the short-circuit photocurrent density and a 23% enhancement in the energy conversion efficiency, compared with the randomly textured reference cells without nanoparticles. Among the measured plasmonic solar cells the highest efficiency achieved was 8.1%. The significant enhancement is mainly attributed to the broadband light scattering arising from the integration of the tailored nucleated silver nanoparticles.

In situ TEM investigation of congruent phase transition and structural evolution of nanostructured silicon/carbon anode for lithium ion batteries.

Abstract: It is well-known that upon lithiation, both crystalline and amorphous Si transform to an armorphous LixSi phase, which subsequently crystallizes to a (Li, Si) crystalline compound, either Li15Si4 or Li22Si5. Presently, the detailed atomistic mechanism of this phase transformation and the degradation process in nanostructured Si are not fully understood. Here, we report the phase transformation characteristic and microstructural evolution of a specially designed amorphous silicon (a-Si) coated carbon nanofiber (CNF) composite during the charge/discharge process using in situ transmission electron microscopy and density function theory molecular dynamic calculation. We found the crystallization of Li15Si4 from amorphous LixSi is a spontaneous, congruent phase transition process without phase separation or large-scale atomic motion, which is drastically different from what is expected from a classic nucleation and growth process. The a-Si layer is strongly bonded to the CNF and no spallation or cracking is o...

Polycrystalline Silicon for Integrated Circuits and Displays

Abstract: Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.

Low‐Temperature, Solution‐Processed and Alkali Metal Doped ZnO for High‐Performance Thin‐Film Transistors

Abstract: ) and its dep-osition requires a high-cost vacuum process. More importantly, the poor transparency of silicon makes it unsuitable for trans-parent applications, and transparency is one of the key issues for future display technology. Consequently, in a search for alterna-tives for amorphous silicon, considerable interest has focused on metal oxide semiconductors, such as In, Ga, or Zn oxides, as these exhibit high optical transparencies, and have excel-lent electrical properties with high electron mobility, chemical stability, and solution processability. For example, ZnO-based semiconductors have been successfully incorporated into var-ious electronic devices, such as electron transfer layers for solar cells,

Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering

Abstract: Damage of the hydrogenated amorphous/crystalline silicon interface passivation during transparent conductive oxide sputtering is reported. This occurs in the fabrication process of silicon heterojunction solar cells. We observe that this damage is at least partially caused by luminescence of the sputter plasma. Following low-temperature annealing, the electronic interface properties are recovered. However, the silicon-hydrogen configuration of the amorphous silicon film is permanently changed, as observed from infra-red absorbance spectra. In silicon heterojunction solar cells, although the as-deposited film's microstructure cannot be restored after sputtering, no significant losses are observed in their open-circuit voltage.

The local structure of amorphous silicon.

Abstract: It is widely believed that the continuous random network (CRN) model represents the structural topology of amorphous silicon. The key evidence is that the model can reproduce well experimental reduced density functions (RDFs) obtained by diffraction. By using a combination of electron diffraction and fluctuation electron microscopy (FEM) variance data as experimental constraints in a structural relaxation procedure, we show that the CRN is not unique in matching the experimental RDF. We find that inhomogeneous paracrystalline structures containing local cubic ordering at the 10 to 20 angstrom length scale are also fully consistent with the RDF data. Crucially, they also matched the FEM variance data, unlike the CRN model. The paracrystalline model has implications for understanding phase transformation processes in various materials that extend beyond amorphous silicon.

Reactive Flow in Silicon Electrodes Assisted by the Insertion of Lithium

Abstract: In the search for high-energy density materials for Li-ion batteries, silicon has emerged as a promising candidate for anodes due to its ability to absorb a large number of Li atoms. Lithiation of Si leads to large deformation and concurrent changes in its mechanical properties, from a brittle material in its pure form to a material that can sustain large inelastic deformation in the lithiated form. These remarkable changes in behavior pose a challenge to theoretical treatment of the material properties. Here, we provide a detailed picture of the origin of changes in the mechanical properties, based on first-principles calculations of the atomic-scale structural and electronic properties in a model amorphous silicon (a-Si) structure. We regard the reactive flow of lithiated silicon as a nonequilibrium process consisting of concurrent Li insertion driven by unbalanced chemical potential and flow driven by deviatoric stress. The reaction enables the material to flow at a lower level of stress. Our theoretic...

Diffusion of Lithium in Bulk Amorphous Silicon: A Theoretical Study

Abstract: The rate performance of lithium-ion secondary batteries depends critically on the kinetic transport of Li within the anode material. Here we use first-principles theoretical calculations to study the diffusion of Li in the low-concentration limit, using model electrodes of crystalline and four-fold coordinated bulk amorphous silicon. We identify Li diffusion pathways that have relatively low energy barriers ( 1 nm) distances depends on the atomic-scale features of the silicon host. We find that both the energy barriers for diffusion and the topology of the atomic structure control the diffusion. We estimate the diffusion rate in amorphous Si anode to be comparable to the rate in crystalline Si anodes. These findings shed light on the wide range of reported experimental results for Li diffusion in Si anodes.

Efficiency Enhancement of Organic and Thin-Film Silicon Solar Cells with Photochemical Upconversion

Abstract: The efficiency of thin-film solar cells with large optical band gaps, such as organic bulk heterojunction or amorphous silicon solar cells, is limited by their inability to harvest the (infra)red part of the solar spectrum. Photochemical upconversion based on triplet–triplet annihilation (TTA-UC) can potentially boost those solar cells by absorbing sub-bandgap photons and coupling the upconverted light back into the solar cell in a spectral region that the cell can efficiently convert into electrical current. In the present study we augment two types of organic solar cells and one amorphous silicon (a-Si:H) solar cell with a TTA-upconverter, demonstrating a solar cell photocurrent increase of up to 0.2% under a moderate concentration (19 suns). The behavior of the organic solar cells, whose augmentation with an upconverting device is so-far unreported, is discussed in comparison to a-Si:H solar cells. Furthermore, on the basis of the TTA rate equations and optical simulations, we assess the potential of T...

Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys

Abstract: A method of forming a semiconductor material of a photovoltaic device that includes providing a surface of a hydrogenated amorphous silicon containing material, and annealing the hydrogenated amorphous silicon containing material in a deuterium containing atmosphere. Deuterium from the deuterium-containing atmosphere is introduced to the lattice of the hydrogenated amorphous silicon containing material through the surface of the hydrogenated amorphous silicon containing material. In some embodiments, the deuterium that is introduced to the lattice of the hydrogenated amorphous silicon containing material increases the stability of the hydrogenated amorphous silicon containing material.

Copper-Coated Amorphous Silicon Particles as an Anode Material for Lithium-Ion Batteries

Abstract: Colloidally grown hydrogenated amorphous silicon (a-Si:H) particles offer promise as anodes for lithium ion batteries with a much higher energy density than graphite. We have found that significantly improved battery cycle performance and enhanced lithium storage capacity (by a factor of 7) is achieved by depositing copper (Cu) on the a-Si:H particles using a polyol reduction method. The superior performance appears to result from an electronically conducting network formed by the Cu coating. High-resolution interfacial spectroelectrochemical studies with in situ Raman spectroscopy illustrates the role of Cu coating over a-Si:H particles and provides insight into improving low Coulombic efficiency and capacity fading on cycling of Si-based anodes in Li-ion batteries.

Silicon Filaments in Silicon Oxide for Next-Generation Photovoltaics

Abstract: Nanometer wide silicon filaments embedded in an amorphous silicon oxide matrix are grown at low temperatures over a large area. The optical and electrical properties of these mixed-phase nanomaterials can be tuned independently, allowing for advanced light management in high efficiency thin-film silicon solar cells and for band-gap tuning via quantum confinement in third-generation photovoltaics.

Dielectric core-shell optical antennas for strong solar absorption enhancement.

Abstract: We demonstrate a new light trapping technique that exploits dielectric core–shell optical antennas to strongly enhance solar absorption. This approach can allow the thickness of active materials in solar cells lowered by almost 1 order of magnitude without scarifying solar absorption capability. For example, it can enable a 70 nm thick hydrogenated amorphous silicon (a-Si:H) thin film to absorb 90% of incident solar radiation above the bandgap, which would otherwise require a thickness of 400 nm in typical antireflective coated thin films. This strong enhancement arises from a controlled optical antenna effect in patterned core–shell nanostructures that consist of absorbing semiconductors and nonabsorbing dielectric materials. This core–shell optical antenna benefits from a multiplication of enhancements contributed by leaky mode resonances (LMRs) in the semiconductor part and antireflection effects in the dielectric part. We investigate the fundamental mechanism for this enhancement multiplication and de...

Amorphous silicon nanowires combining high nonlinearity, FOM and optical stability.

Abstract: We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re(γ) = 1200W−1m−1 We observe no degradation in these parameters over the entire course of our experiments including systematic study under operation at 2 W coupled peak power (ie ~2GW/cm2) over timescales of at least an hour

Heterojunction silicon microwire solar cells.

Abstract: We report radial heterojunction solar cells of amorphous silicon on crystalline silicon microwires with high surface passivation. While the shortened collection path is exploited to increase the photocurrent, proper choice of the wire radius and the highly passivated surface prevent drastic decrease in the voltage due to high surface-to-volume ratio. The heterojunction is formed by depositing a ∼12–16 nm of amorphous silicon on crystalline silicon wires of radius approximately equal to minority carrier diffusion length (∼10 μm). In spite of very short carrier lifetime (<1 μs), the microwire array devices generate photocurrent of ∼30 mA/cm2, and the same time, voltages close to 600 mV are achieved, leading to efficiency in excess of 12% in extremely short carrier lifetime silicon. We also find that formation of nanocrystallites of silicon in the deposited film results in loss of the expected passivation.

Ultralow power continuous-wave frequency conversion in hydrogenated amorphous silicon waveguides

Abstract: We demonstrate wavelength conversion through nonlinear parametric processes in hydrogenated amorphous silicon (a-Si:H) with maximum conversion efficiency of −13 dB at telecommunication data rates (10 GHz) using only 15 mW of pump peak power. Conversion bandwidths as large as 150 nm (20 THz) are measured in continuous-wave regime at telecommunication wavelengths. The nonlinear refractive index of the material is determined by four-wave mixing (FWM) to be n2=7.43×10−13 cm2/W, approximately an order of magnitude larger than that of single crystal silicon.

Core/shell structured NaYF4:Yb3+/Er3+/Gd+3 nanorods with Au nanoparticles or shells for flexible amorphous silicon solar cells

Abstract: A simple approach for preparing near-infrared (NIR) to visible upconversion (UC) NaYF4:Yb/Er/Gd nanorods in combination with gold nanostructures has been reported. The grown UC nanomaterials with Au nanostructures have been applied to flexible amorphous silicon solar cells on the steel substrates to investigate their responses to sub-bandgap infrared irradiation. Photocurrent–voltage measurements were performed on the solar cells. It was demonstrated that UC of NIR light led to a 16-fold to 72-fold improvement of the short-circuit current under 980 nm illumination compared to a cell without upconverters. A maximum current of 1.16 mA was obtained for the cell using UC nanorods coated with Au nanoparticles under 980 nm laser illumination. This result corresponds to an external quantum efficiency of 0.14% of the solar cell. Mechanisms of erbium luminescence in the grown UC nanorods were analyzed and discussed.

Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction

Abstract: Low-temperature annealing of hydrogenated amorphous silicon (a-Si:H) is investigated. An identical energy barrier is found for the reduction of deep defects in the bulk of a-Si:H films and at the interface such layers form with crystalline Si (c-Si) surfaces. This finding gives direct physical evidence that the defects determining a-Si:H/c-Si interface recombination are silicon dangling bonds and that also kinetically this interface has no unique features compared to the a-Si:H bulk.