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Robert M. Wallace

Researcher at University of Texas at Dallas

Publications -  503
Citations -  41237

Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.

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Instrument-related geometrical factors affecting the intensity in XPS and ARXPS experiments

TL;DR: In this article, the angular dependence of the X-ray photoelectron spectroscopy (XPS) signal is influenced not only by the electron take-off angle, but also by instrument-related geometrical factors.
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GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

TL;DR: Findings indicate that the O8 interface serves as a promising candidate for high quality III-V MOS devices, and the interface states, leading to Fermi level pinning, originate from unsaturated interfacial Ga atoms.
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Atomic and Electronic Structures of WTe2 Probed by High Resolution Electron Microscopy and ab Initio Calculations

TL;DR: In this article, an atomic resolution image of transition metal dichalcogenides (TMDs) is presented, which can be distinguished in three major orientations along the [100, [010, and [001] zone axes.
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Half-Cycle Atomic Layer Deposition Reaction Study Using O3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As

TL;DR: In this paper, the effect of water and ozone as the oxidant in the atomic layer deposition (ALD) of aluminum oxide on the ammonium-sulfide-passivated In 0.53 Ga 0.47
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High sensitivity gas permeability measurement system for thin plastic films

Abstract: We have developed a system to quantitatively measure the permeation of gases through thin flexible substrates with high sensitivity. The system consists of two chambers, a high pressure side and an ultrahigh vacuum (UHV) side, separated by the flexible sample to be analyzed. The system is calibrated using a combination of a National Institute of Standards and Technology traceable calibrated He leak and a variable aperture calibrated orifice. The base total pressure for the UHV side is 1–3×10−10Torr. The partial pressure of individual gases that we are studying is <10−10Torr. The sample to be measured is secured between the two chambers using two 2.75 conflat flanges, two copper gaskets, and two indium “O” rings. The key factors that impact sensitivity and quantification are (1) reducing the residual partial pressure of the gas of interest to as low a value as possible on the UHV side of the system, (2) sealing the plastic sample between the two chambers with no detectable gas leakage around the sample or from the outside, (3) supporting the plastic substrate so that it can withstand 700Torr pressure on the high pressure side, and (4) developing a calibration procedure that closely mimics the actual permeability measurement. The system allows us to measure permeation rates as low as 1×10−6g∕m2-day for He, 1×10−6g∕m2-day for O2, and 5×10−7g∕m2-day for Ar.