R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics
Pavel Bolshakov,Ava Khosravi,Peng Zhao,Paul K. Hurley,Christopher L. Hinkle,Robert M. Wallace,Chadwin D. Young +6 more
TL;DR: In this article, a dual-gate field effect transistor configuration was evaluated using an Al2O3/HfO2 bilayer and showed significant improvement in device performance due to the insertion of the thin Al 2O3 layer, which significantly reduced the net fixed positive oxide charge at the top-gate MoS2/high-k dielectric interface.
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Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy
Adam T. Barton,Ruoyu Yue,Sarkar R. M. Anwar,Hui Zhu,Xin Peng,Stephen McDonnell,Ning Lu,Rafik Addou,Luigi Colombo,Moon J. Kim,Robert M. Wallace,Christopher L. Hinkle +11 more
TL;DR: In this paper, transition metal dichalcogenides (TMDs) and insulating hexagonal boron nitride (h-BN) were grown by molecular beam epitaxy (MBE) demonstrating the unique opportunities for fabricating all 2D heterostructures with the desired band alignments for novel nanoelectronic devices.
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Report on the 47th IUVSTA Workshop ‘Angle-Resolved XPS: the current status and future prospects for angle-resolved XPS of nano and subnano films’
Alberto Herrera-Gomez,Alberto Herrera-Gomez,John T. Grant,Peter J. Cumpson,M. Jenko,Francisco S. Aguirre-Tostado,C. R. Brundle,Thierry Conard,G. Conti,Charles S. Fadley,Julia E. Fulghum,Keisuke Kobayashi,László Kövér,H. Nohira,Robert L. Opila,S. Oswald,R. W. Paynter,Robert M. Wallace,Wolfgang S. M. Werner,J. Wolstenholme +19 more
TL;DR: The 47th IUVSTA Workshop on Angle-Resolved XPS as mentioned in this paper discussed the current status and future prospects for angle-resolved XPs of nano and sub-nano films.
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Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics
G. Pant,A. Gnade,M. J. Kim,Robert M. Wallace,Bruce E. Gnade,Manuel Quevedo-Lopez,Paul Kirsch,Siddarth A. Krishnan +7 more
TL;DR: In this article, the electrical and chemical properties of ultrathin HfON and HfSiON gate dielectrics are investigated as a function of physical thickness using Grazing incidence x-ray diffraction.
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The effect of graphite surface condition on the composition of Al2O3 by atomic layer deposition
TL;DR: In this article, the nucleation of atomic layer deposition of Al2O3 on highly oriented pyrolytic graphite (HOPG) using trimethlyaluminum with ozone as the oxidant (TMA/O3) was studied.