R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
More filters
Journal ArticleDOI
Impact of process anneals on high-k/β-Ga2O3 interfaces and capacitance
TL;DR: In this article , annealing of β-Ga2O3 with forming gas or nitrogen produced degraded capacitance-voltage (C-V) behavior compared to a sample annealed with pure oxygen, with a higher maximum capacitance and smaller flat-band voltage shift.
Proceedings ArticleDOI
Sensitivity of high-k encapsulated MoS 2 transistors to I-V measurement execution time
TL;DR: In this paper, high-k encapsulated M0S2 field effect transistors were fabricated and electrically characterized and compared with AkO 3 and HfO 2 and AkO 2 FETs and their I-V response to execution time.
Patent
Metal oxide semiconductor field effect transistor with crystalline oxide layer on a III-V material
Patent
Method of forming crystalline oxides on III-V materials
TL;DR: A metal oxide semiconductor field effect transistor (MOSFET) includes a substrate having a source region, a drain region, and a channel region between the source region and the drain region as discussed by the authors.
Proceedings ArticleDOI
Surface characterization of nickel germanides for Schottky source/drain contacts to germanium p-MOSFETs
Durga Gajula,David McNeill,B. E. Coss,Hong Dong,Srikar Jandhyala,Jin-Hyun Kim,Robert M. Wallace,B. M. Armstrong +7 more
TL;DR: In this article, the surface characterization of nickel germanides formed on germanium with different RTA treatments by using SEM, XRD and XPS techniques was performed using the Schottky barrier height of NiGe/Ge diodes.