R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
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Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
Christopher L. Hinkle,M. Milojevic,Barry Brennan,A. M. Sonnet,Francisco S. Aguirre-Tostado,G. Hughes,Eric M. Vogel,Robert M. Wallace +7 more
TL;DR: In this article, the role of the most stable bound native oxides GaOx (0.5≤x≤1.5) is investigated using monochromatic x-ray photoelectron spectroscopy.
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HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
Stephen McDonnell,Barry Brennan,Angelica Azcatl,Ning Lu,Hong Dong,Creighton Buie,Jiyoung Kim,Christopher L. Hinkle,Moon J. Kim,Robert M. Wallace +9 more
TL;DR: It is found that ALD on MoS2 bulk material is not uniform and surface functionalization will be required before controllable and low defect density high-κ/MoS2 interfaces will be realized.
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Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces.
Rafik Addou,Stephen McDonnell,Diego Barrera,Zaibing Guo,Angelica Azcatl,Jian Wang,Hui Zhu,Christopher L. Hinkle,Manuel Quevedo-Lopez,Husam N. Alshareef,Luigi Colombo,Julia W. P. Hsu,Robert M. Wallace +12 more
TL;DR: The findings reveal that the semiconductor 2H-MoS2 exhibits both n- and p-type behavior, and the work function as measured by the Kelvin probe is found to vary from 4.4 to 5.3 eV, which will have to be controlled during crystal growth in order to provide high quality uniform materials for future device fabrication.
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SiO2 film thickness metrology by x-ray photoelectron spectroscopy
Zhengfang Lu,John P. McCaffrey,Berinder P. S. Brar,Glen D. Wilk,Robert M. Wallace,Leonard C. Feldman,S. P. Tay +6 more
TL;DR: In this article, x-ray photoelectron spectroscopy, transmission electron microscopy (TEM), spectroscopic ellipsometry, and capacitance-voltage analysis were used to measure silicon dioxide films.
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Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition.
Jack Chan,Archana Venugopal,Adam Pirkle,Stephen McDonnell,David Hinojos,Carl W. Magnuson,Rodney S. Ruoff,Luigi Colombo,Robert M. Wallace,Eric M. Vogel +9 more
TL;DR: In this paper, the authors show that the mobility of CVD graphene devices on SiO2 is limited by trapped water between the graphene and substrate, impurities introduced during the transfer process and adsorbates acquired from the ambient.