R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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Journal ArticleDOI
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
Glen D. Wilk,Robert M. Wallace +1 more
TL;DR: Hafnium silicate (HfSixOy) gate dielectric films with ∼6 at. % Hf exhibit significantly improved leakage properties over SiO2 in the ultrathin regime while remaining thermally stable in direct contact with Si.
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High-K materials and metal gates for CMOS applications
John Robertson,Robert M. Wallace +1 more
TL;DR: In this article, a review of the high-K gate stack is presented, including the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure, their electronic structure, band offsets, electronic defects, charge trapping and conduction mechanisms, reliability, mobility degradation and oxygen scavenging.
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MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
Steven Chuang,Corsin Battaglia,Angelica Azcatl,Stephen McDonnell,Jeong Seuk Kang,Xingtian Yin,Mahmut Tosun,Rehan Kapadia,Hui Fang,Robert M. Wallace,Ali Javey +10 more
TL;DR: It is shown that substoichiometric molybdenum trioxide (MoOx, x < 3), a high work function material, acts as an efficient hole injection layer to MoS2 and WSe2 and will enable future exploration of their performance limits and intrinsic transport properties.
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Hole Selective MoOx Contact for Silicon Solar Cells
Corsin Battaglia,Xingtian Yin,Xingtian Yin,Xingtian Yin,Maxwell Zheng,Maxwell Zheng,Ian D. Sharp,Teresa Chen,Stephen McDonnell,Angelica Azcatl,Carlo Carraro,Biwu Ma,Roya Maboudian,Robert M. Wallace,Ali Javey,Ali Javey +15 more
TL;DR: This work demonstrates the use of nm-thick transition metal oxides as a simple and versatile pathway for dopant-free contacts to inorganic semiconductors and has important implications toward enabling a novel class of junctionless devices with applications for solar cells, light-emitting diodes, photodetectors, and transistors.
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GaAs interfacial self-cleaning by atomic layer deposition
Christopher L. Hinkle,A. M. Sonnet,Eric M. Vogel,Stephen McDonnell,G. Hughes,M. Milojevic,Bong-Ki Lee,Francisco S. Aguirre-Tostado,K. J. Choi,Kim Hyo-Sik,Jiyoung Kim,Robert M. Wallace +11 more
TL;DR: In this paper, the reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 was studied using in situ monochromatic x-ray photoelectron spectroscopy.