R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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A density-functional theory study of tip electronic structures in scanning tunneling microscopy.
TL;DR: Analysis of the atomic and electronic structures of transition metal scanning tunneling microscopy tips: Rh, Pd, W, Ir, and Pt pyramidal models, and transition metal atom tips supported on the W surface, by means of ab initio density-functional theory methods shows different behaviors near the Fermi level.
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Digermane Deposition on Si(100) and Ge(100): from Adsorption Mechanism to Epitaxial Growth
D. Dick,Jean François Veyan,Roberto C. Longo,Stephen McDonnell,Josh B. Ballard,Xiaoye Qin,Hong Dong,James H. G. Owen,John N. Randall,Robert M. Wallace,Kyeongjae Cho,Yves J. Chabal +11 more
TL;DR: In this article, first principles calculations reveal that digermane (Ge2H6) chemisorbs through a β-hydride elimination mechanism, forming Ge2H5 and H on both Si(100)-(2 × 1) and Ge(100)(2×1) surfaces, instead of the previously proposed Ge-Ge bond breaking mechanism, and subsequently decomposes into an ad-dimer.
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Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy
TL;DR: In this article, a three-dimensional spreading and trapping of charge in buried, 10 nm thick SiO2 films following hot-electron injection at one location was studied. And the trapped charge was found to be distributed approximately uniformly across the thickness of the oxide, and spread laterally ∼50 nm, much more than the oxide film thickness.
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Deuterium sintering of silicon-on-insulator structures: D diffusion and replacement reactions at the SiO2/Si interface
TL;DR: In this paper, the authors use dynamic secondary ion mass spectrometry (SIMS) to examine the mechanism of H incorporation into and retention within a buried SiO2 film at 625°C.
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(Invited) Integration of 2D Materials for Advanced Devices: Challenges and Opportunities
Rafik Addou,Robert M. Wallace +1 more
TL;DR: In this article, the authors propose a 2D materials beyond graphene, such as transition metal dichalcogenides (TMDs), which have bandgap properties for applications even at the single atomic layer level.