R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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Proceedings ArticleDOI
Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability
Paul Kirsch,Manuel Quevedo-Lopez,Siddarth A. Krishnan,C. Krug,Husam N. Alshareef,Chanro Park,R. Harris,Naim Moumen,A. Neugroschel,Gennadi Bersuker,Byoung Hun Lee,Jian Wang,G. Pant,Bruce E. Gnade,Moon J. Kim,Robert M. Wallace,Jesse S. Jur,Daniel J. Lichtenwalner,Angus I. Kingon,Rajarao Jammy +19 more
TL;DR: In this paper, a HfLaSiON/metal gate stack that achieves low threshold voltage (VT = 0.33V), low equivalent oxide thickness (EOT=0.91nm) and 83% SiO2 mobility is presented.
Journal ArticleDOI
Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices.
Lanxia Cheng,Jaebeom Lee,Hui Zhu,Arul Vigneswar Ravichandran,Qingxiao Wang,Antonio T. Lucero,Moon J. Kim,Robert M. Wallace,Luigi Colombo,Jiyoung Kim +9 more
TL;DR: The experimental findings provide a facile way of fabricating scalable hybrid gate dielectrics on transition metal dichalcogenides for 2D-material-based flexible electronics applications.
Journal ArticleDOI
An ESDIAD study of chemisorbed hydrogen on clean and H-exposed Si(111)-(7 × 7)
TL;DR: In this article, the chemisorption of H on Silicon(111)-(7x7) has been studied by digital ESDIAD and temperature programmed desorption methods, and it has been found that residual hydrogen in the bulk of the Si(111) can be transported to the surface upon annealing to temperatures above approx. 1000 K.
Journal ArticleDOI
Origin of HfO2/GaAs interface states and interface passivation: A first principles study
TL;DR: In this paper, a model neutral interface (HfO2 and GaAs surfaces terminated with two O and one Ga atoms per surface unit cell) was found to remove gap states due to the balance of the interface charge.