R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP
Hong Dong,Santosh Kc,Xiaoye Qin,Barry Brennan,Stephen McDonnell,D. M. Zhernokletov,Christopher L. Hinkle,Jiyoung Kim,Kyeongjae Cho,Robert M. Wallace +9 more
TL;DR: In this article, the dependence of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO2 on various chemically treated and native oxide InP (100) substrates was investigated using in situ X-ray photoelectron spectroscopy.
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PH3 surface chemistry on Si(111)-(7×7) : a study by Auger spectroscopy and electron stimulated desorption methods
TL;DR: In this article, the adsorption and decomposition of PH3 on Si(111)•7×7 was investigated in ultrahigh vacuum by means of temperature programmed desorption, low energy electron diffraction, Auger electron spectroscopy (AES), and ESD methods.
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Understanding the impact of annealing on interface and border traps in the Cr/HfO2/Al2O3/MoS2 system
Peng Zhao,Andrea Padovani,Pavel Bolshakov,Ava Khosravi,Luca Larcher,Paul K. Hurley,Christopher L. Hinkle,Robert M. Wallace,Chadwin D. Young +8 more
TL;DR: In this article, top-gated, few-layer MoS2 transistors with HfO2 (6 nm)/Al2O3 (3 nm) gate dielectric stacks are fabricated and electrically characterized by capacitance-voltage (C-V) measurements to study electrica...
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Quantification of pinhole density in ultrathin diamond‐like carbon films
Alberto Herrera-Gomez,Alberto Herrera-Gomez,Francisco S. Aguirre-Tostado,Yongjian Sun,R. Contreras-Guerrero,Robert M. Wallace,Y. Hisao,Eric W. Flint +7 more
TL;DR: In this paper, the percentage of uncovered area in ultrathin diamond-like carbon (DLC) films on Si(001) wafers was quantified through angle-resolved X-ray photoelectron spectroscopy.
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Surface and interfacial study of half cycle atomic layer deposited Al2O3 on black phosphorus
Hui Zhu,Xiaoye Qin,Angelica Azcatl,Rafik Addou,Stephen McDonnell,Peide D. Ye,Robert M. Wallace +6 more
TL;DR: In this article, the interfacial chemistry of half cycle ALD of Al2O3 on black-P was examined using in situ X-ray photoelectron spectroscopy (XPS).