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Robert M. Wallace

Researcher at University of Texas at Dallas

Publications -  503
Citations -  41237

Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.

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Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

TL;DR: In this article, the half-cycle atomic layer deposition reactions of trimethyl aluminum and water on GaAs exposed to wet chemical sulfur treatments are studied for the formation of Al2O3.
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MoS2–Titanium Contact Interface Reactions

TL;DR: The formation of the Ti-MoS2 interface is studied by X-ray photoelectron spectroscopy and it is found that, if deposition under high vacuum as opposed to ultrahigh vacuum conditions are used, TiO2 forms at the interface rather than Ti.
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Atomically-thin layered films for device applications based upon 2D TMDC materials

TL;DR: In this paper, a review of recent developments in 2D layered materials, specifically transition-metal dichalcogenides (TMDCs), from a thin film perspective is presented.
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Rapid Selective Etching of PMMA Residues from Transferred Graphene by Carbon Dioxide

TL;DR: In this paper, in situ Raman and infrared spectroscopy studies of PMMA transferred graphene annealed in nitrogen, two main processes involving polymer dehydrogenation and subsequent depolymerization were uncovered.
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HfO2 on UV–O3 exposed transition metal dichalcogenides: interfacial reactions study

TL;DR: In this article, the surface chemistry of MoS2, WSe2 and MoSe2 upon ultraviolet (UV)?O3 exposure was studied in situ by x-ray photoelectron spectroscopy (XPS).