R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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Journal ArticleDOI
Thermal properties of perfluorinated n-alkanoic acids self-assembled on native aluminum oxide surfaces
TL;DR: In this paper, a homologous series of long-chain perfluorinated n-alkanoic acids self-assembled on native aluminum oxide surfaces using thermal desorption mass spectrometry and monochromatic x-ray photoelectron spectroscopy.
Patent
Gate structure and method
Robert M. Wallace,Bruce E. Gnade +1 more
TL;DR: In this paper, a silicate-germanate gate dielectric on SiGe PMOS areas and Si NMOS areas plus HBTs with Si-SiGe emitter-base junctions.
Journal ArticleDOI
Low-temperature deposition of hafnium silicate gate dielectrics
Prakaipetch Punchaipetch,G. Pant,Manuel Quevedo-Lopez,C. Yao,M. El-Bouanani,M. J. Kim,Robert M. Wallace,Bruce E. Gnade +7 more
TL;DR: In this paper, the physical and electrical properties of hafnium silicate (HfSi/sub x/O/sub y/) films produced by low-temperature processing conditions (spl les/150/spl deg/C) suitable for flexible display applications were studied using sputter deposition and ultra-violet generated ozone treatments.
Journal ArticleDOI
Strain-induced ferromagnetism in LaCoO3: Theory and growth on Si (100)
Agham-Bayan S Posadas,Morgann Berg,Hosung Seo,David J. Smith,Alexander P. Kirk,D. M. Zhernokletov,Robert M. Wallace,A. L. de Lozanne,Alexander A. Demkov +8 more
TL;DR: In this article, an epitaxial ferromagnetic LaCoO"3 on (100)-oriented silicon was grown by molecular beam epitaxy using a relaxation of the buffer layer.