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Robert M. Wallace

Researcher at University of Texas at Dallas

Publications -  503
Citations -  41237

Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.

Papers
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Journal ArticleDOI

W Te 2 thin films grown by beam-interrupted molecular beam epitaxy

Lee A. Walsh, +11 more
TL;DR: In this paper, the growth of WTe2 thin films by molecular beam epitaxy is demonstrated for the first time on a variety of 2D substrates including MoS2, Bi2Te3, and graphite.
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Gate induced leakage and drain current offset in organic thin film transistors

Huiping Jia, +4 more
- 01 Feb 2006 - 
TL;DR: In this article, the authors proposed the most probable mechanism for leakage and drain current offset in poly 3-hexylthiophene (P3HT) organic thin film transistors (OTFTs).
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An in situ examination of atomic layer deposited alumina/InAs"100… interfaces

Alexander P. Kirk, +3 more
- 21 May 2010 - 
TL;DR: In this article, InAs(100) wafers were either passivated with sulfur from a (NH4)2Sx solution or etched with NH4OH and then characterized with monochromatic x-ray photoelectron spectroscopy (XPS) before and after in situ deposition of Al2O3 by atomic layer deposition.
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Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

Pavel Bolshakov, +5 more
- 21 Jul 2017 - 
TL;DR: In this article, a high quality Al2O3 layer was developed to achieve high performance in top-gate MoS2 transistors, and a forming gas anneal was found to enhance device performance due to a reduction in the charge trap density of the backside dielectric.
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Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems

Stephen McDonnell, +9 more
- 04 Apr 2012 - 
TL;DR: In this article, the Al2O3/GaAs and HfO2/GAAs interfaces after atomic layer deposition were studied using in situ monochromatic x-ray photoelectron spectroscopy.