R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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Journal ArticleDOI
Boron penetration studies from p+ polycrystalline Si through HfSixOy
Manuel Quevedo-Lopez,M. El-Bouanani,M. J. Kim,Bruce E. Gnade,Robert M. Wallace,Mark R. Visokay,A. LiFatou,M. J. Bevan,Luigi Colombo +8 more
TL;DR: In this paper, the authors present detailed penetration studies from B-doped polysilicon through alternate gate dielectric candidate HfSixOy films, showing that B diffusion through grain boundaries after HfsixOy crystallization is responsible for the enhanced B diffusivity observed.
Patent
Hafnium nitride gate dielectric
Glen D. Wilk,Robert M. Wallace +1 more
TL;DR: In this article, a field effect semiconductor device comprising a high permittivity hafnium-zirconium nitride gate dielectric and a method of forming the same are disclosed.
Journal ArticleDOI
One dimensional metallic edges in atomically thin WSe2 induced by air exposure
Rafik Addou,Christopher M. Smyth,Ji Young Noh,Yu-Chuan Lin,Yi Pan,Sarah M. Eichfeld,Stefan Fölsch,Joshua A. Robinson,Kyeongjae Cho,Randall M. Feenstra,Robert M. Wallace +10 more
TL;DR: In this article, the authors report the observation of metallic edges in atomically thin transition metal dichalcogenides (WSe2) monolayers grown by chemical vapor deposition on epitaxial graphene and demonstrate that the formation of metallic substoichiometric tungsten oxide (WO2.7) is responsible for the high conductivity measured along the edges.
Journal ArticleDOI
Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism
TL;DR: Schottky barrier height tuning using high-κ/SiO2 interfacial dipoles is reported in this paper, where the dipole tunes the effective work function of TaN/p-Si by more than 0.8 eV.
Journal ArticleDOI
Adsorption kinetics of p-nitrobenzenethiol self-assembled monolayers on a gold surface.
TL;DR: The adsorption kinetics of octadecanethiol and p-nitrobenzenethiol from ethanol solutions has been studied by means of contact angle, optical ellipsometry, angle-resolved X-ray photoelectron spectroscopy (ARXPS), and grazing angle attenuated total reflection Fourier transform infrared (FTIR) measurements.