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Robert M. Wallace

Researcher at University of Texas at Dallas

Publications -  503
Citations -  41237

Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.

Papers
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Journal ArticleDOI

High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3

Ava Khosravi, +4 more
- 30 Mar 2019 - 
TL;DR: This work demonstrates that a combination of the ALD process and the formation of weak S–O bonds presents an effective route for a uniform and conformal high-κ dielectric for advanced devices based on 2D materials.
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Interaction of H2O with active Spindt-type molybdenum field emitter arrays

Babu R. Chalamala, +2 more
- 09 Apr 1999 - 
TL;DR: In this article, the effects of H2O exposure on the emission properties of several Spindt-type molybdenum field emitter arrays were studied, ranging from (13.8±5.7)% for 50 L to 90.7% for a 4000 L exposure.
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Dielectric dipole mitigated Schottky barrier height tuning using atomic layer deposited aluminum oxide for contact resistance reduction

B. E. Coss, +7 more
- 09 Sep 2011 - 
TL;DR: Schottky barrier height tuning is reported from the insertion of thin layers of AlOx and SiO2 at the interface between tantalum nitride and p-type silicon in this paper.
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Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100)

Prasanna Sivasubramani, +4 more
- 11 Oct 2006 - 
TL;DR: The thermal stability of sputter deposited LaAlOx and lanthanum aluminum oxynitride (LaAlON) dielectrics on top of Si (100) was evaluated after 1000°C rapid thermal annealing (RTA).
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Silicon interfacial passivation layer chemistry for high-k/InP interfaces.

Hong Dong, +8 more
- 30 Apr 2014 - 
TL;DR: The interfacial chemistry of thin (1 nm) silicon (Si) interfacial passivation layers (IPLs) deposited on acid-etched and native oxide InP(100) samples prior to atomic layer deposition (ALD) is investigated and an indium out-diffusion to the sample surface is observed through the Si IPL and the high-k dielectric.