R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
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Manufacture for field-effect device in integrated circuit
TL;DR: In this paper, the problem of the thickness of a gate dielectric was taken into consideration, and a method for the formation of a field-effect semiconductor device constituted by a zirconium oxynitride (or hafnium) silicon gate Dielectric of a high permittivity was proposed.
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Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization
Antonio T. Lucero,Young-Chul Byun,Xiaoye Qin,Lanxia Cheng,Hyoungsub Kim,Robert M. Wallace,Jiyoung Kim +6 more
TL;DR: In this paper, a ZnO/ZnS interfacial passivation layer (IPL) was studied using in-situ X-ray photoelectron spectroscopy.
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In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)
Hong Dong,Santosh Kc,Angelica Azcatl,Wilfredo Cabrera,Xiaoye Qin,Barry Brennan,D. M. Zhernokletov,Kyeongjie Cho,Robert M. Wallace +8 more
TL;DR: In this article, the interfacial chemistry of thin Al and Hf (∼3nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectrum.
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Al2O3 on WSe2 by ozone based atomic layer deposition: Nucleation and interface study
TL;DR: In this article, the atomic layer deposition process using ozone and trimethylaluminum (TMA) for the deposition of Al2O3 films on WSe2 was investigated, and it was found that the ozone-based ALO3 deposition enhanced the nucleation of Al 2O3 in comparison to the water/TMA process.
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Theoretical Demonstration of the Ionic Barristor.
TL;DR: This Letter uses first-principles simulations to demonstrate the absence of Fermi-level pinning when graphene is in contact with transition metal dichalcogenides (TMDs), and finds that formation of either an ohmic or Schottky contact is possible.