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Robert M. Wallace

Researcher at University of Texas at Dallas

Publications -  503
Citations -  41237

Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.

Papers
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A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides.

Yifan Nie, +5 more
- 07 Jun 2017 - 
TL;DR: A KMC simulation method is developed for the growth modeling on the van der Waals epitaxy of TMDs and different phenomena observed during vdW epitaxy process are analysed in terms of complex competitions among multiple kinetic processes.
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Void formation on ultrathin thermal silicon oxide films on the Si(100) surface

Yi Wei, +2 more
- 26 Aug 1996 - 
TL;DR: In this article, the formation of voids on the thermally grown (650 °C) ultrathin (∼1 nm) silicon oxide films on the Si(100) surface was investigated by using ultrahigh vacuum scanning tunneling microscopy.
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First principles kinetic Monte Carlo study on the growth patterns of WSe2 monolayer

Yifan Nie, +9 more
TL;DR: In this paper, a phase diagram of domain morphology is developed in the space of flux and the precursor stoichiometry, in which the triangular compact, fractal and dendritic domains are identified.
Journal Article

High-κ gate dielectric materials

Robert M. Wallace, +1 more
- 01 Mar 2002 - 
TL;DR: In this article, a number of materials are currently under consideration to replace SiO 2 and SiO x N y as a key component of Si-based integrated-circuit technology: the gate dielectric for the transistor.
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High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.

Guanyu Zhou, +14 more
- 01 Sep 2018 - 
TL;DR: Room-temperature field-effect hole mobilities as high as 707 cm2 V-1 s-1 are reported, achieved using transfer-free, low-tem temperature (≤120 °C) direct growth of helical tellurium (Te) nanostructure devices on SiO2 /Si.