R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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Journal ArticleDOI
New Mo6Te6 Sub‐Nanometer‐Diameter Nanowire Phase from 2H‐MoTe2
TL;DR: A novel phase transition, from multilayered 2H-MoTe2 to a parallel bundle of sub-nanometer-diameter metallic Mo6 Te6 nanowires (NWs) driven by catalyzer-free thermal-activation under vacuum, is demonstrated.
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Epitaxial integration of ferromagnetic correlated oxide LaCoO3 with Si (100)
Agham-Bayan S Posadas,Morgann Berg,Hosung Seo,A. L. de Lozanne,Alexander A. Demkov,David J. Smith,Alexander P. Kirk,D. M. Zhernokletov,Robert M. Wallace +8 more
TL;DR: In this paper, the ground state of the strained LaCoO3 on (100)-oriented silicon is shown to be ferromagnetic with a TC of 85 K. The ground state is stabilized by a sufficiently large biaxial tensile strain with the transition accompanied by a partial untilting of the CoO6 octahedra.
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Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films
Manuel Quevedo-Lopez,M. El-Bouanani,M. J. Kim,Bruce E. Gnade,Robert M. Wallace,Mark R. Visokay,A. LiFatou,James J. Chambers,Luigi Colombo +8 more
TL;DR: In this article, the authors demonstrate that incorporating N in Hf-silicate films reduces B penetration through the dielectric film, which is attributed to the lower Hf content in the films and the incorporation of N. The minimum temperatures for B penetration are estimated to be approximately 950 and 1050°C for HfSixOy and Hf6OyNz, respectively.
Patent
Anode plate for flat panel display having silicon getter
TL;DR: In this paper, a getter material (29) of porous silicon is deposited on the substrate (26) between the conductive regions (28) of the anode plate (10).
Journal ArticleDOI
Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon
Lisa F. Edge,Darrell G. Schlom,Prasanna Sivasubramani,Robert M. Wallace,Bernhard Holländer,Jürgen Schubert +5 more
TL;DR: In this article, the dielectric properties of amorphous LaAlO3 thin films were determined through capacitance-voltage and currentvoltage measurements, and the electrical measurements indicated that the amorphoulfloor thin films have a dielectrically constant (K) of K=16±2.