R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
More filters
Journal ArticleDOI
Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing
Wilfredo Cabrera,Barry Brennan,Hong Dong,Terrance O'Regan,Ian M. Povey,Scott Monaghan,Eamon O'Connor,Paul K. Hurley,Robert M. Wallace,Yves J. Chabal +9 more
TL;DR: In this paper, annealing of HfO2/In0.53Ga0.47As stacks by low energy ion scattering and X-ray photo electron spectroscopy was found to be consistent with changes in interface layer thickness observed by transmission electron microscopy.
Journal ArticleDOI
Deuterium transport through device structures
TL;DR: In this article, secondary ion mass spectrometry was used to characterize the hydrogen/deuterium distribution and concentration on complimentary oxide silicon (CMOS) test structures subjected to molecular deuterium (D2) anneals.
Journal ArticleDOI
Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films
Karel Vanheusden,William L. Warren,Daniel M. Fleetwood,J.R. Schwank,Marty R. Shaneyfelt,Bruce L. Draper,P.S. Winokur,R. A. B. Devine,L. B. Archer,George A. Brown,Robert M. Wallace +10 more
TL;DR: In this article, the chemical kinetics of mobile-proton reactions in the SiO2 film of Si/SiO2/Si structures were analyzed as a function of forming-gas anneal parameters in the 300-600°C temperature range.
Journal ArticleDOI
Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
Christopher M. Smyth,Lee A. Walsh,Pavel Bolshakov,Massimo Catalano,Rafik Addou,Luhua Wang,Jiyoung Kim,Moon J. Kim,Chadwin D. Young,Christopher L. Hinkle,Robert M. Wallace +10 more
TL;DR: In this paper, Ohmic-like Pd contacts were used for WSe2 transistors with impressive ION/IOFF ratios of 106 and Pd-WSe2 Schottky diodes with near zero variability.
Journal ArticleDOI
A comparative study of atomic layer deposition of Al 2 O 3 and HfO 2 on AlGaN/GaN
Xiaoye Qin,Lanxia Cheng,Stephen McDonnell,Angelica Azcatl,Hui Zhu,Jiyoung Kim,Robert M. Wallace +6 more
TL;DR: In this article, the atomic layer depositions of Al2O3 and HfO2 on AlGaN/GaN were systematically studied using in situ X-ray photoelectron spectroscopy.