R
Robert M. Wallace
Researcher at University of Texas at Dallas
Publications - 503
Citations - 41237
Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.
Papers
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Journal ArticleDOI
In situ study of HfO2 atomic layer deposition on InP(100)
Hong Dong,Barry Brennan,D. M. Zhernokletov,Joungmok Kim,Christopher L. Hinkle,Robert M. Wallace +5 more
TL;DR: The interfacial chemistry of the native oxide and chemically treated InP samples during atomic layer deposition (ALD) HfO2 growth at 250°C has been studied by in situ X-ray photoelectron spectroscopy.
Journal ArticleDOI
New insights in the passivation of high-k/InP through interface characterization and metal-oxide-semiconductor field effect transistor demonstration: Impact of crystal orientation
TL;DR: In this article, a trap neutral level (E0) model is proposed to explain all observations from MOSCAP and MOSFET characterizations, which leads to the demonstration of record-high drive current (Ids=600μA/μm) for a InP (100) with gate length (LG) of 1'μm and relatively large subthreshold swing of 230'mV/dec at off-state.
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Interfacial bonding and electronic structure of HfO2/GaSb interfaces: A first principles study
Ka Xiong,Weichao Wang,D. M. Zhernokletov,Santosh Kc,Roberto C. Longo,Robert M. Wallace,Kyeongjae Cho +6 more
TL;DR: In this article, the interfacial bonding and electronic structure of HfO2/GaSb interfaces have been investigated through first principles calculations, and the calculated electronic structures of these interfaces reveal that some O-rich interfaces are semiconducting interfaces without any gap states.
Journal ArticleDOI
Dry oxidation resistance of ultrathin nitride films: Ordered and amorphous silicon nitride on Si(111)
Robert M. Wallace,Yi Wei +1 more
TL;DR: In this article, the oxidation resistance of ultrathin (<2 nm) nitride films produced from NH3 exposure in ultrahigh vacuum are examined with in situ scanning tunneling microscopy and x-ray photoelectron spectroscopy.
Patent
Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption
TL;DR: In this paper, the process of using electron beam induced stimulated desorption chemistry to produce structures of nanometer order size on surfaces was described, where the adsorption of other atoms and/or molecules was controlled at predetermined regions and lines on the surface.