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Robert M. Wallace

Researcher at University of Texas at Dallas

Publications -  503
Citations -  41237

Robert M. Wallace is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Atomic layer deposition. The author has an hindex of 84, co-authored 499 publications receiving 37236 citations. Previous affiliations of Robert M. Wallace include Texas Instruments & University of Texas System.

Papers
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Origins of Fermi-Level Pinning between MolybdenumDichalcogenides (MoSe 2 , MoTe 2 ) and Bulk MetalContacts: Interface Chemistry and Band Alignment

Christopher M. Smyth, +5 more
- 12 Aug 2019 - 
TL;DR: In this paper, thin metal films (Au, Ir, Cr, and Sc), deposited by an electron beam on bulk, exfoliated WS2 and WTe2 using two different reactor base pressures (high vacuum (HV <2 × 10-6 mbar; ultra high vacuum (...
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Thermal stability of nitrogen in nitrided HfSiO2/SiO2/Si(001) ultrathin films

Alberto Herrera-Gomez, +5 more
- 19 Nov 2008 - 
TL;DR: In this article, the authors report on the stability under rapid thermal annealing (RTA) of the nitrogen depth profile in nitrided HfO2/SiO2 /SiO///Si[001] and Hf0.8Si0.2O2
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Computational Study of MoS2/HfO2 Defective Interfaces for Nanometer-Scale Electronics.

Santosh Kc, +3 more
TL;DR: The unique electronic properties of monolayer-to-few-layered transition-metal dichalcogenides and dielectric interfaces are described in detail for the first time, showing the promising interfacial characteristics for future transistor technology.
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Low-κ organic layer as a top gate dielectric for graphene field effect transistors

Greg Mordi, +7 more
- 11 May 2012 - 
TL;DR: In this article, the authors demonstrate the characteristics of dual gated graphene field effect transistors using a thin layer (∼7nm) of parylene-C as a top-gate dielectric.
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Chemical and electrical characterization of the HfO2/InAlAs interface

Barry Brennan, +8 more
- 12 Sep 2013 - 
TL;DR: In this paper, the impact of surface preparations and atomic layer deposition of HfO2 on these surfaces using x-ray photoelectron spectroscopy was investigated to analyze the chemical interactions taking place, as well as the electrical performance of associated capacitor devices.